Properties of room-temperature ferromagnetic semiconductor in manganese-doped bilayer graphene by chemical vapor deposition

Title
Properties of room-temperature ferromagnetic semiconductor in manganese-doped bilayer graphene by chemical vapor deposition
Authors
김은규
Keywords
ELECTRIC-FIELD; CARBON; FILMS; GAS
Issue Date
2015-05
Publisher
ROYAL SOC CHEMISTRY
Citation
JOURNAL OF MATERIALS CHEMISTRY C, v. 3, NO 17, Page. 4235-4238
Abstract
We report a ferromagnetic graphene field-effect transistor with a band gap. The Mn-doped graphene has a coercive field (H-c) of 188 Oe and a remanent magnetization of 102 emu cm(-3) at 10 K. The temperature-dependent conductivity indicates that the Mn-doped graphene has a band gap of 165 meV. A fabricated graphene FET revealed p-type semiconducting behavior, and the field effect mobility was determined to be approximately 2543 cm(2) V-1 s(-1) at room temperature.
URI
http://pubs.rsc.org/en/Content/ArticleLanding/2015/TC/C5TC00051C#!divAbstracthttp://hdl.handle.net/20.500.11754/24788
ISSN
2050-7526; 2050-7534
DOI
http://dx.doi.org/10.1039/c5tc00051c
Appears in Collections:
COLLEGE OF NATURAL SCIENCES[S](자연과학대학) > PHYSICS(물리학과) > Articles
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