Enhanced structural and electrical features of amorphous InGaZnO thin film transistors via a heavy Kr gas process

Title
Enhanced structural and electrical features of amorphous InGaZnO thin film transistors via a heavy Kr gas process
Author
홍진표
Keywords
Oxide TFT; IGZO; Kr gas; Oxygen vacancy
Issue Date
2015-04
Publisher
ELSEVIER SCIENCE BV
Citation
CURRENT APPLIED PHYSICS, v. 15, NO 8, Page. 910-914
Abstract
We report the influence of a heavy Kr gas sputtering process on the electrical and structural features of amorphous indium-gallium-zinc-oxide (a-IGZO) thin film transistors (TFFs). Electrical observation revealed effective reduction of threshold voltage shifts by adapting a simple sputtering process with Kr gas during growth of a-IGZO TFTs. In addition, the application of Kr-gas resulted in a reduction of oxygen vacancies associated with defect sites in the a-IGZO active channel layer. Structural analyses including atomic force microscopy, X-ray reflectivity, Auger electron spectroscopy, and X-ray photoelectron spectroscopy depth profiling were carried out, along with electrical bias stability tests that convincingly confirm progress of heavy Kr gas process-induced features. (C) 2015 Elsevier B.V. All rights reserved.
URI
http://www.sciencedirect.com/science/article/pii/S1567173915001236http://hdl.handle.net/20.500.11754/23962
ISSN
1567-1739; 1878-1675
DOI
10.1016/j.cap.2015.04.004
Appears in Collections:
COLLEGE OF NATURAL SCIENCES[S](자연과학대학) > PHYSICS(물리학과) > Articles
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