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dc.contributor.author송윤흡-
dc.date.accessioned2016-10-14T06:54:00Z-
dc.date.available2016-10-14T06:54:00Z-
dc.date.issued2015-04-
dc.identifier.citationJOURNAL OF THE KOREAN PHYSICAL SOCIETY, v. 66, NO 6, Page. 972-977en_US
dc.identifier.issn0374-4884-
dc.identifier.issn1976-8524-
dc.identifier.urihttp://link.springer.com/article/10.3938%2Fjkps.66.972-
dc.identifier.urihttp://hdl.handle.net/20.500.11754/23821-
dc.description.abstractThe reliability of a magnetic tunnel junction (MTJ) with an MgO tunnel barrier was evaluated. In particular, various voltage tests were used to investigate the effects of the barrier thickness and the temperature on the resistance drift. We compared the resistance change during a constant voltage stress (CVS) test and confirmed a trap/detrap phenomenon during the interval stress for different barrier thicknesses and temperatures. The resistance drift representing degradation and the time to breakdown (T (BD) ) representing the breakdown characteristic were better for a thicker barrier and lower temperature, but were worse for a thinner barrier and a higher temperature. The results suggest that breakdown and degradation due to trap generation strongly depend on both the barrier thickness and the temperature. Furthermore, as the TBD varies at steady rates with changing barrier thickness, temperature, and electric field, we assume that a MTJ with an adnormal thin layer of MgO can be screened effectively based on the predicted T (BD) . As a result, the barrier thickness and the temperature are very important in determining the reliability of a MTJ, and this study is expected to be helpful in understanding the degradation and the breakdown of a MTJ.en_US
dc.description.sponsorshipThis research was supported by the MOTIE (Ministry of Trade, Industry & Energy (10044608) and by the KSRC (Korea Semiconductor Research Consortium) support program for the development of future semiconductor devices.en_US
dc.language.isoenen_US
dc.publisherKOREAN PHYSICAL SOCen_US
dc.subjectMagnetic tunnel junctionen_US
dc.subjectMgOen_US
dc.subjectDegradationen_US
dc.subjectBreakdownen_US
dc.titleThickness and temperature dependences of the degradation and the breakdown for MgO-based magnetic tunnel junctionsen_US
dc.typeArticleen_US
dc.relation.no6-
dc.relation.volume66-
dc.identifier.doi10.3938/jkps.66.972-
dc.relation.page972-977-
dc.relation.journalJOURNAL OF THE KOREAN PHYSICAL SOCIETY-
dc.contributor.googleauthorLee, Jung-Min-
dc.contributor.googleauthorSong, Yun-Heub-
dc.relation.code2015000007-
dc.sector.campusS-
dc.sector.daehakCOLLEGE OF ENGINEERING[S]-
dc.sector.departmentDEPARTMENT OF ELECTRONIC ENGINEERING-
dc.identifier.pidyhsong2008-
Appears in Collections:
COLLEGE OF ENGINEERING[S](공과대학) > ELECTRONIC ENGINEERING(융합전자공학부) > Articles
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