High performance solution processed zirconium oxide gate dielectric appropriate for low temperature device application
- Title
- High performance solution processed zirconium oxide gate dielectric appropriate for low temperature device application
- Author
- 정재경
- Keywords
- High-k inorganic dielectric; Solution processed dielectric and channel; High mobility
- Issue Date
- 2015-04
- Publisher
- ELSEVIER SCIENCE SA
- Citation
- THIN SOLID FILMS, v. 589, Page. 90-94
- Abstract
- This paper reports a solution processed electrical device with zirconium oxide gate dielectric that was fabricated at a low enough temperature appropriate for flexible electronics. Both inorganic dielectric and channel materials were synthesized in the same organic solvent. The dielectric constant achieved was 13 at 250 degrees C with a reasonably low leakage current. The bottom gate transistor devices showed the highest mobility of 75 cm(2)/V s. The device is operated at low voltage with high-k dielectric with excellent transconductance and low threshold voltage. Overall, the results highlight the potential of low temperature solution based deposition in fabricating more complicated circuits for a range of applications. (C) 2015 Elsevier B. V. All rights reserved.
- URI
- http://www.sciencedirect.com/science/article/pii/S0040609015003806http://hdl.handle.net/20.500.11754/23809
- ISSN
- 0040-6090
- DOI
- 10.1016/j.tsf.2015.04.035
- Appears in Collections:
- COLLEGE OF ENGINEERING[S](공과대학) > ELECTRONIC ENGINEERING(융합전자공학부) > Articles
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