Improvement in Field-Effect Mobility of Indium Zinc Oxide Transistor by Titanium Metal Reaction Method

Title
Improvement in Field-Effect Mobility of Indium Zinc Oxide Transistor by Titanium Metal Reaction Method
Authors
정재경
Keywords
thin-film transistors (TFTs).; Indium zinc oxide (IZO); metal capping; mobility; oxygen-related defect
Issue Date
2015-03
Publisher
IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
Citation
IEEE TRANSACTIONS ON ELECTRON DEVICES, v. 62, NO 4, Page. 1195-1199
Abstract
This paper examined the effects of postdeposition annealing on the electrical properties of titanium-capped (TC) indium-zinc oxide (IZO) films and their IZO thin-film transistors. The TC IZO transistor oxidized at the temperature of 300 degrees C exhibited a high field-effect mobility of 61.0 cm(2)/Vs, low subthreshold gate swing of 110 mV/decade, Vth of -0.4 V, and high I-ON/OFF ratio of 2.3 x 10(8). In addition, the positive gate bias stress-induced stability of the TC IZO transistor was better than that of the control device without metal capping treatment. This was attributed to the scavenging effect of the loosely bonded oxygen species in the IZO semiconductor by titanium thermal oxidation.
URI
http://ieeexplore.ieee.org/document/7055917/http://hdl.handle.net/20.500.11754/22898
ISSN
0018-9383; 1557-9646
DOI
http://dx.doi.org/10.1109/TED.2015.2406331
Appears in Collections:
COLLEGE OF ENGINEERING[S](공과대학) > DEPARTMENT OF ELECTRONIC ENGINEERING(융합전자공학부) > Articles
Files in This Item:
There are no files associated with this item.
Export
RIS (EndNote)
XLS (Excel)
XML


qrcode

Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.

BROWSE