Full metadata record
DC Field | Value | Language |
---|---|---|
dc.contributor.author | 장재영 | - |
dc.date.accessioned | 2016-08-30T06:01:52Z | - |
dc.date.available | 2016-08-30T06:01:52Z | - |
dc.date.issued | 2015-03 | - |
dc.identifier.citation | PHYSICAL CHEMISTRY CHEMICAL PHYSICS, v. 17, NO 9, Page. 6635-6643 | en_US |
dc.identifier.issn | 1463-9076 | - |
dc.identifier.issn | 1463-9084 | - |
dc.identifier.uri | http://pubs.rsc.org/en/Content/ArticleLanding/2015/CP/C4CP05787B#!divAbstract | - |
dc.identifier.uri | http://hdl.handle.net/20.500.11754/22862 | - |
dc.description.abstract | Solution-processed organic field effect transistors (OFETs), which are amenable to facile large-area processing methods, have generated significant interest as key elements for use in all-organic electronic applications aimed at realizing low-cost, lightweight, and flexible devices. The low performance levels of n-type solution-processed bottom-contact OFETs unfortunately continue to pose a barrier to their commercialization. In this study, we introduced a combination of CVD-grown graphene source/drain (S/D) electrodes and fullerene (C-60) in a solution-processable n-type semiconductor toward the fabrication of n-type bottom-contact OFETs. The C-60 coating in the channel region was achieved by modifying the surface of the oxide gate dielectric layer with a phenyl group-terminated self-assembled monolayer (SAM). The graphene and phenyl group in the SAMs induced pi-pi interactions with C-60, which facilitated the formation of a C-60 coating. We also investigated the effects of thermal annealing on the reorganization properties and field-effect performances of the overlaying solution-processed C-60 semiconductors. We found that thermal annealing of the C-60 layer on the graphene surface improved the crystallinity of the face-centered cubic (fcc) phase structure, which improved the OFET performance and yielded mobilities of 0.055 cm(2) V-1 s(-1). This approach enables the realization of solution-processed C-60-based FETs using CVD-grown graphene S/D electrodes via inexpensive and solution-process techniques. | en_US |
dc.description.sponsorship | National Research Foundation of Korea (NRF) - Korean Government (MSIP) | en_US |
dc.language.iso | en | en_US |
dc.publisher | ROYAL SOC CHEMISTRY | en_US |
dc.subject | SELF-ASSEMBLED MONOLAYERS | en_US |
dc.subject | SEMICONDUCTOR THIN-FILMS | en_US |
dc.subject | ORGANIC SEMICONDUCTOR | en_US |
dc.subject | INTERFACE | en_US |
dc.subject | TRANSPORT | en_US |
dc.subject | MOLECULE | en_US |
dc.subject | MOBILITY | en_US |
dc.subject | C-60 | en_US |
dc.subject | INJECTION | en_US |
dc.subject | ENERGY | en_US |
dc.title | Solution-processed n-type fullerene field-effect transistors prepared using CVD-grown graphene electrodes: improving performance with thermal annealing | en_US |
dc.type | Article | en_US |
dc.relation.no | 9 | - |
dc.relation.volume | 17 | - |
dc.identifier.doi | 10.1039/c4cp05787b | - |
dc.relation.page | 6635-6643 | - |
dc.relation.journal | PHYSICAL CHEMISTRY CHEMICAL PHYSICS | - |
dc.contributor.googleauthor | Jeong, Yong Jin | - |
dc.contributor.googleauthor | Yun, Dong-Jin | - |
dc.contributor.googleauthor | Jang, Jaeyoung | - |
dc.contributor.googleauthor | Park, Seonuk | - |
dc.contributor.googleauthor | An, Tae Kyu | - |
dc.contributor.googleauthor | Kim, Lae Ho | - |
dc.contributor.googleauthor | Kim, Se Hyun | - |
dc.contributor.googleauthor | Park, Chan Eon | - |
dc.relation.code | 2015000061 | - |
dc.sector.campus | S | - |
dc.sector.daehak | COLLEGE OF ENGINEERING[S] | - |
dc.sector.department | DEPARTMENT OF ENERGY ENGINEERING | - |
dc.identifier.pid | jyjang15 | - |
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