Correlative analysis of conducting filament distribution at interfaces and bias-dependent noise sources in TiN/TiOx/Pt and Pt/TiOx/TiOy/Pt bipolar resistive switching frames

Title
Correlative analysis of conducting filament distribution at interfaces and bias-dependent noise sources in TiN/TiOx/Pt and Pt/TiOx/TiOy/Pt bipolar resistive switching frames
Authors
홍진표
Keywords
THIN-FILMS; MECHANISM; MEMORIES; ARRAY
Issue Date
2015-03
Publisher
AMER INST PHYSICS
Citation
APPLIED PHYSICS LETTERS, v. 106, NO 3, Page. 506-508
Abstract
We evaluated conducting filament distributions occurring at interfaces of TiN/TiOx/Pt and Pt/TiOx/TiOy/Pt bipolar resistive switching elements after electroforming by identifying bias-dependent low-frequency noise sources. The TiN/TiOx/Pt switching element showed higher noise features at low and high resistance states (LRS and HRS) than the Pt/TiOx/TiOy/P-t one. These behaviors are predominantly associated with the presence of different resistance distributions at LRS and HRS observed in both switching I-V curves. We propose a possible mechanism to explain the unique observed features by employing the role of the oxygen reservoir and conducting filament stability at interfaces of the two switching elements. (C) 2015 AIP Publishing LLC.
URI
http://scitation.aip.org/content/aip/journal/apl/106/3/10.1063/1.4906532http://hdl.handle.net/20.500.11754/22857
ISSN
0003-6951; 1077-3118
DOI
http://dx.doi.org/10.1063/1.4906532
Appears in Collections:
COLLEGE OF NATURAL SCIENCES[S](자연과학대학) > PHYSICS(물리학과) > Articles
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