Impact of the non-uniform intensity distribution caused by a meshed pellicle of extreme ultraviolet lithography

Title
Impact of the non-uniform intensity distribution caused by a meshed pellicle of extreme ultraviolet lithography
Author
박진구
Keywords
EUVL; Pellicle; EUV pellicle; Meshed pellicle; Mask defect control
Issue Date
2015-03
Publisher
ELSEVIER SCIENCE BV
Citation
MICROELECTRONIC ENGINEERING, v. 143, NO Special SI, Page. 31-36
Abstract
A physical optics simulation was performed to simulate intensity non-uniformity on a wafer passing through an extreme ultraviolet meshed pellicle. The non-uniformity is directly related to the coherence radius of the illumination and the mesh parameters. The intensity non-uniformity was reduced when using illumination conditions with a larger coherence radius in a fixed mesh pitch. The circular illumination sigma(r) = 0.5 can accommodate a five times larger pitch than the dipole illumination sigma(r) = 0.1. An aerial image simulation for a 16 nm half-pitch pattern was also performed to confirm the critical dimension uniformity (CDU) caused by the meshed pellicle. The CDU is directly proportional to the non-uniformity on the wafer in order to determine suitable mesh parameters that produce a small CDU through a non-uniform intensity distribution calculation. The non-uniformity on the wafer should be less than 0.2% in order to achieve the desired CDU less than 0.1 nm. (C) 2015 Elsevier B.V. All rights reserved.
URI
http://www.sciencedirect.com/science/article/pii/S0167931715001227http://hdl.handle.net/20.500.11754/22808
ISSN
0167-9317; 1873-5568
DOI
10.1016/j.mee.2015.03.009
Appears in Collections:
GRADUATE SCHOOL[S](대학원) > BIONANOTECHNOLOGY(바이오나노학과) > Articles
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