Investigation of in-situ doping profile for N plus /P/N plus bidirectional switching device using Si1-xGex/Si/Si1-xGex structure

Title
Investigation of in-situ doping profile for N plus /P/N plus bidirectional switching device using Si1-xGex/Si/Si1-xGex structure
Author
송윤흡
Keywords
switching device; UHV-CVD; SiGe; N plus PN plus; STT-MRAM
Issue Date
2015-03
Publisher
IEICE-INST ELECTRONICS INFORMATION COMMUNICATIONS ENG
Citation
IEICE ELECTRONICS EXPRESS, v. 12, NO 7, Page. 1-6
Abstract
We present a novel junction device with bidirectional current flow for switching devices in a high density spin torque transfer magnetic random access memory (STT-MRAM). In this structure, an N+ type strained SiGe material is adopted as a conduction layer to generate higher electron mobility and a flatter doping profile. A SiGe/Si/SiGe heterojunction structure is also used to obtain a better I-on/I-off ratio due to a steeper junction profile. It is confirmed by 3D simulation that this structure provides higher current drivability and Ion/Ioff ratio. After the simulation, a junction device with N+ Si0.8Ge0.2/P Si/N+ Si0.8Ge0.2 and an area of 4 x 4 um(2) is fabricated and evaluated for bidirectional current flow. From the results obtained, we propose that this bidirectional switching device with a heterojunction structure is a promising candidate for a high density STT-MRAM.
URI
https://www.jstage.jst.go.jp/article/elex/12/7/12_12.20150098/_articlehttp://hdl.handle.net/20.500.11754/22803
ISSN
1349-2543
DOI
10.1587/elex.12.20150098
Appears in Collections:
COLLEGE OF ENGINEERING[S](공과대학) > ELECTRONIC ENGINEERING(융합전자공학부) > Articles
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