Multi-Stack Extreme-Ultraviolet Pellicle with Out-of-Band Reduction

Title
Multi-Stack Extreme-Ultraviolet Pellicle with Out-of-Band Reduction
Author
박진구
Keywords
Extreme-Ultraviolet Lithography; EUV Pellicle; Multi-Stack Pellicle; Contamination; Out-of-Band Radiation
Issue Date
2015-03
Publisher
SPIE
Citation
SPIE Proceedings, v. 9422, Extreme Ultraviolet (EUV) Lithography VI, 94221O (March 19, 2015) Page. 1-11
Abstract
The out-of-band (OoB) radiation that can cause serious aerial image deformation on the wafer is reported. In order to check the maximum allowable OoB radiation reflectivity at the extreme ultra-violet (EUV) pellicle, we simulated the effect of OoB radiation and found that the maximum allowable OoB radiation reflectivity at the pellicle should be smaller than 15 % which satisfy our criteria such as aerial image critical dimension (CD), contrast, and normalized image log slope (NILS). We suggested a new multi-stack EUV pellicle that can have high EUV transmission, minimal OoB radiation reflectivity, and enough deep ultra-violet transmission for inspection and alignment of the mask through the EUV pellicle. © (2015) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
URI
http://proceedings.spiedigitallibrary.org/proceeding.aspx?articleid=2210848http://hdl.handle.net/20.500.11754/22784
ISSN
0277-786X
DOI
10.1117/12.2086052
Appears in Collections:
GRADUATE SCHOOL[S](대학원) > BIONANOTECHNOLOGY(바이오나노학과) > Articles
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