Highly stable hafnium-tin-zinc oxide thin film transistors with stacked bilayer active layers

Title
Highly stable hafnium-tin-zinc oxide thin film transistors with stacked bilayer active layers
Author
박종완
Keywords
Amorphous oxide semiconductor; Thin film transistor; Hafnium-tin-zinc oxide (HTZO); NBTI; Subthreshold swing
Issue Date
2015-02
Publisher
ELSEVIER SCIENCE BV
Citation
CURRENT APPLIED PHYSICS, v. 15, NO 2, Page. 94-97
Abstract
Hf-Sn-Zn-O (HTZO) thin films were prepared on SiO2/SiNx substrates at room temperature by the direct current (DC) magnetron sputtering of Hf-doped Sn-Zn-O targets. The characteristics of films with different amounts of Hf were analyzed. Amorphous HTZO films were obtained by increasing the Hf content, while polycrystalline films have not shown with Hf doping. With the proper Hf concentration in the HTZO films (similar to 2.0 atomic % Hf/(Hf + Sn + Zn + O)), HTZO films demonstrated good performance as an oxide semiconductor channel material in thin film transistors (TFTs) with a field effect mobility (mu(FE)) of 10.9 cm(2)V(-1) s(-1), an on/off current ratio of 10(9), and a subthreshold voltage swing of 0.71 V/decade. (C) 2014 Elsevier B. V. All rights reserved.
URI
http://www.sciencedirect.com/science/article/pii/S1567173914003599http://hdl.handle.net/20.500.11754/22362
ISSN
1567-1739; 1878-1675
DOI
10.1016/j.cap.2014.11.007
Appears in Collections:
COLLEGE OF ENGINEERING[S](공과대학) > MATERIALS SCIENCE AND ENGINEERING(신소재공학부) > Articles
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