Effects of growth temperature on surface morphology of InP grown on patterned Si(001) substrates

Title
Effects of growth temperature on surface morphology of InP grown on patterned Si(001) substrates
Authors
박진섭
Keywords
Crystal morphology; Metalorganic chemical vapor deposition; Phosphides; Semiconducting III-V materials
Issue Date
2015-02
Publisher
ELSEVIER SCIENCE BV
Citation
JOURNAL OF CRYSTAL GROWTH, v. 416, Page. 113-117
Abstract
We report on the selective area growth (SAG) of high quality le layers on patterned (0 0 1)Si substrates at various growth temperatures by metal organic chemical vapor deposition. Thin le and GaP layers were used as intermediate buffer layers between patterned Si surface and high temperature (HT) InP layer. The growth temperatures of HT InP layers on patterned substrate had strong effect on their growth behaviors including surface morphology. The SAG InP layers grown at 650 degrees C and 550 degrees C exhibited the typical {1 1 1} facets and the smooth (0 0 1) Lop surface, respectively. Anti-phase domain boundaries and defects were trapped by lateral sidewalk of the etched Si substrate. Through the defect necking effect within the etched Si surface, defect-free lnP layers with atomically smooth surface were obtained at a growth temperature of 550 degrees C. (C) 2015 Elsevier B.V. All rights reserved.
URI
http://www.sciencedirect.com/science/article/pii/S0022024815000482http://hdl.handle.net/20.500.11754/22359
ISSN
0022-0248; 1873-5002
DOI
http://dx.doi.org/10.1016/j.jcrysgro.2015.01.027
Appears in Collections:
COLLEGE OF ENGINEERING[S](공과대학) > DEPARTMENT OF ELECTRONIC ENGINEERING(융합전자공학부) > Articles
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