Effect of an Al2O3/TiO2 Passivation Layer on the Performance of Amorphous Zinc-Tin Oxide Thin-Film Transistors

Title
Effect of an Al2O3/TiO2 Passivation Layer on the Performance of Amorphous Zinc-Tin Oxide Thin-Film Transistors
Author
최덕균
Keywords
Amorphous oxide semiconductor; zinc-tin-oxide (ZTO); Al2O3/TiO2; passivation layer; electron beam irradiation
Issue Date
2015-02
Publisher
SPRINGER
Citation
JOURNAL OF ELECTRONIC MATERIALS, v. 44, NO 2, Page. 651-657
Abstract
The effect of an Al2O3/TiO2 stacked passivation layer on the performance of amorphous ZnSnO (a-ZTO) thin-film transistors (TFTs) was investigated by comparing field-effect mobility (mu (FE)) and subthreshold swing after passivation layer deposition. The values observed were 4.7 cm(2)/Vs and 0.64 V/decade, respectively, for uncoated TFTs and 4.6 cm(2)/Vs and 0.62 V/decade for passivated TFTs. In addition, excellent water vapor transmission was observed for electron beam-irradiated Al2O3/TiO2-passivated poly(ether sulfone) substrates in a humidity test, because the Al2O3/TiO2 passivation layer can enhance the interface properties between Al2O3 and TiO2. To investigate the origin of this enhancement, we performed x-ray photoelectron spectroscopy of both unpassivated and Al2O3/TiO2-passivated TFTs with a-ZTO back-channel layers after Ar annealing.
URI
http://link.springer.com/article/10.1007/s11664-014-3554-yhttp://hdl.handle.net/20.500.11754/22330
ISSN
0361-5235; 1543-186X
DOI
10.1007/s11664-014-3554-y
Appears in Collections:
COLLEGE OF ENGINEERING[S](공과대학) > MATERIALS SCIENCE AND ENGINEERING(신소재공학부) > Articles
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