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dc.contributor.author박진구-
dc.date.accessioned2016-07-20T07:38:25Z-
dc.date.available2016-07-20T07:38:25Z-
dc.date.issued2015-02-
dc.identifier.citationMATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING, v. 33, Page. 161-168en_US
dc.identifier.issn1369-8001-
dc.identifier.issn1873-4081-
dc.identifier.urihttp://www.sciencedirect.com/science/article/pii/S1369800115000669-
dc.identifier.urihttp://hdl.handle.net/20.500.11754/22129-
dc.description.abstract"Amino acids, when used with ceria based slurries, yield high selectivity in shallow trench isolation chemical mechanical polishing (CMP). However, the presence of impurities in the abrasives also plays a role in determining the selectivity. Experiments were performed with two different ceria abrasives, one with high purity and the other with controlled lanthanum doping. Various amino acids were evaluated in order to identify the nature of interaction between the additives and the abrasives. The abrasives were further characterized using transmission electron microscopy, X-ray diffraction and X-ray photoelectron spectroscopy. The removal rate results show that glycine and proline are sensitive to the La doping in the ceria abrasive whereas the other amino acids studied suppress the nitride removal irrespective of the purity of the abrasives. Thermo-gravimetric analysis shows that the extent of adsorption of glycine or proline on ceria depends on the presence of La doping, whereas the other amino acids adsorb equally well on ceria abrasives with or without La doping. (C) 2015 Elsevier Ltd. All rights reserved."en_US
dc.description.sponsorshipDepartment of Science and Technology (DST), Ministry of Science and Technology, India National Research Foundation (NRF), Koreaen_US
dc.language.isoenen_US
dc.publisherELSEVIER SCI LTDen_US
dc.subjectShallow trench isolationen_US
dc.subjectChemical Mechanical Planarizationen_US
dc.subjectHigh selectivityen_US
dc.subjectCeriaen_US
dc.subjectLanthanumen_US
dc.titleEffect of lanthanum doping in ceria abrasives on chemical mechanical polishing selectivity for shallow trench isolationen_US
dc.typeArticleen_US
dc.relation.volume33-
dc.identifier.doi10.1016/j.mssp.2015.01.049-
dc.relation.page161-168-
dc.relation.journalMATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING-
dc.contributor.googleauthor박진구-
dc.contributor.googleauthorPark, Jin-Goo-
dc.contributor.googleauthorPraveen, B. V. S.-
dc.contributor.googleauthorCho, Byoung-Jun-
dc.contributor.googleauthorRamanathan, S.-
dc.relation.code2015001020-
dc.sector.campusS-
dc.sector.daehakGRADUATE SCHOOL[S]-
dc.sector.departmentDEPARTMENT OF BIONANOTECHNOLOGY-
dc.identifier.pidjgpark-
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GRADUATE SCHOOL[S](대학원) > BIONANOTECHNOLOGY(바이오나노학과) > Articles
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