Highly Stable ZnON Thin-Film Transistors With High Field-Effect Mobility Exceeding 50 cm(2)/Vs

Title
Highly Stable ZnON Thin-Film Transistors With High Field-Effect Mobility Exceeding 50 cm(2)/Vs
Authors
박진성
Keywords
reactive sputtering; High mobility; illumination; reliability; transistors; zinc oxynitride
Issue Date
2015-01
Publisher
IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
Citation
IEEE ELECTRON DEVICE LETTERS, v. 36, NO 1, Page. 38-40
Abstract
High-performance thin-film transistors (TFTs) based on ZnON channels were fabricated using a de reactive sputtering method. To improve the photoinduced bias stability, a postannealing process was carried out at a low ambient pressure (similar to 100 mTorr, air ambient) at 250 degrees C for various annealing times (1-5 h). The transfer characteristics of the postannealed ZnON TFTs exhibited an improved subthreshold swing ranging from 0.60 to 0.42 V/decade. Other transport properties remained similar including a high mobility (mu(sat)) of ˃50 cm(2)Ns, a threshold voltage (Vth) of 2.5 V, and an ON OFF drain current ratio of ˃10(8). In addition, photoinduced bias reliability under a gate bias stress (V-G = 20 V) was significantly improved from -10.88 V (1 h) to -2.28 V (5 h). These results can be explained by the enhancement of bonding properties between Zn metal and two different anions (O, N) as stable N Zn O states.
URI
http://hdl.handle.net/20.500.11754/21542http://ieeexplore.ieee.org/document/6939617/?reload=true
ISSN
0741-3106; 1558-0563
DOI
http://dx.doi.org/10.1109/LED.2014.2365614
Appears in Collections:
COLLEGE OF ENGINEERING[S](공과대학) > MATERIALS SCIENCE & ENGINEERING(신소재공학부) > Articles
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