Effect of FOUP atmosphere control on process wafer integrity in sub20nm device fabrication

Title
Effect of FOUP atmosphere control on process wafer integrity in sub20nm device fabrication
Authors
박진구
Keywords
Corrosion; FOUP; N2 Purge; Process queue
Issue Date
2015-01
Publisher
Scitec Publications Ltd.
Citation
Solid State Phenomena, v. 219, Page. 256-259
Abstract
Defects could be generated on the wafers by the particle contamination, formation of organic residue, corrosion, native oxide growth on the surface and airborne molecular contaminants (AMC) [1] etc. These problems hinder the device performance and also can decrease the yield and productivity in the semiconductor manufacturing process. It could be resolved by various cleaning methods [2]. However, the results such as corrosion, native oxide growth on wafer and AMC deposition should be handled properly by N2 gas purge prevention method during the process or standby [3,4]. It should be implemented before starting the process, which can maximize the productivity with a higher yield by minimizing the process queue and maintaining wafer surface integrity in sub 20 nm device fabrication.
URI
http://hdl.handle.net/20.500.11754/21421https://www.scientific.net/SSP.219.256
ISSN
1662-9779
DOI
http://dx.doi.org/10.4028/www.scientific.net/SSP.219.256
Appears in Collections:
GRADUATE SCHOOL[S](대학원) > BIONANOTECHNOLOGY(바이오나노학과) > Articles
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