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dc.contributor.author박진성-
dc.date.accessioned2016-05-27T02:06:06Z-
dc.date.available2016-05-27T02:06:06Z-
dc.date.issued2015-01-
dc.identifier.citationCERAMICS INTERNATIONAL, v. 41, NO 1, Page. 1641-1645en_US
dc.identifier.issn0272-8842-
dc.identifier.urihttp://hdl.handle.net/20.500.11754/21395-
dc.identifier.urihttp://www.sciencedirect.com/science/article/pii/S0272884214014874-
dc.description.abstractTransparent conducting Al-doped ZnO films were deposited by atomic layer deposition with various of Al doping concentrations. In order to explain the change in resistivity of Al-doped ZnO films depending on Al doping concentration, we investigated the correlations between the conducting property and electronic structure in terms of atomic configuration, the evolution of the conduction band and band gap, and band alignments (conduction band offset between minimum of conduction band and Fermi level, Delta E-CB). ZnO film Al-doped at similar to 3 at% and deposited at 250 degrees C showed the lowest resistivity, which resulted in changes in the conduction band of insulating Al2O3 film, and increases in the band gap and conduction band offset (Delta E-CB). (C) 2014 Elsevier Ltd and Techna Group S.r.l. All rights reserved.en_US
dc.language.isoenen_US
dc.publisherELSEVIER SCI LTDen_US
dc.subjectElectronic structureen_US
dc.subjectAl doping concentrationen_US
dc.subjectAl-doped ZnOen_US
dc.subjectConducting mechanismen_US
dc.titleElectronic structure of conducting Al-doped ZnO films as a function of Al doping concentrationen_US
dc.typeArticleen_US
dc.relation.no1-
dc.relation.volume41-
dc.identifier.doi10.1016/j.ceramint.2014.09.102-
dc.relation.page1641-1645-
dc.relation.journalCERAMICS INTERNATIONAL-
dc.contributor.googleauthorPark, Hyun-Woo-
dc.contributor.googleauthorChung, Kwun-Bum-
dc.contributor.googleauthorPark, Jin-Seong-
dc.contributor.googleauthorJi, Seungmuk-
dc.contributor.googleauthorSong, Kyungjun-
dc.contributor.googleauthorLim, Hyuneui-
dc.contributor.googleauthorJang, Moon-Hyung-
dc.relation.code2015002110-
dc.sector.campusS-
dc.sector.daehakCOLLEGE OF ENGINEERING[S]-
dc.sector.departmentDIVISION OF MATERIALS SCIENCE & ENGINEERING-
dc.identifier.pidjsparklime-
Appears in Collections:
COLLEGE OF ENGINEERING[S](공과대학) > MATERIALS SCIENCE AND ENGINEERING(신소재공학부) > Articles
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