Electronic structure of conducting Al-doped ZnO films as a function of Al doping concentration

Title
Electronic structure of conducting Al-doped ZnO films as a function of Al doping concentration
Authors
박진성
Keywords
Electronic structure; Al doping concentration; Al-doped ZnO; Conducting mechanism
Issue Date
2015-01
Publisher
ELSEVIER SCI LTD
Citation
CERAMICS INTERNATIONAL, v. 41, NO 1, Page. 1641-1645
Abstract
Transparent conducting Al-doped ZnO films were deposited by atomic layer deposition with various of Al doping concentrations. In order to explain the change in resistivity of Al-doped ZnO films depending on Al doping concentration, we investigated the correlations between the conducting property and electronic structure in terms of atomic configuration, the evolution of the conduction band and band gap, and band alignments (conduction band offset between minimum of conduction band and Fermi level, Delta E-CB). ZnO film Al-doped at similar to 3 at% and deposited at 250 degrees C showed the lowest resistivity, which resulted in changes in the conduction band of insulating Al2O3 film, and increases in the band gap and conduction band offset (Delta E-CB). (C) 2014 Elsevier Ltd and Techna Group S.r.l. All rights reserved.
URI
http://hdl.handle.net/20.500.11754/21395http://www.sciencedirect.com/science/article/pii/S0272884214014874
ISSN
0272-8842
DOI
http://dx.doi.org/10.1016/j.ceramint.2014.09.102
Appears in Collections:
COLLEGE OF ENGINEERING[S](공과대학) > MATERIALS SCIENCE AND ENGINEERING(신소재공학부) > Articles
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