Versatile hole injection of VO2: Energy level alignment at N,N'-di(1-naphthyl)-N,N0-diphenyl-(1,1'-biphenyl)-4, 4'-diamine/VO2/fluorine-doped tin oxide

Title
Versatile hole injection of VO2: Energy level alignment at N,N'-di(1-naphthyl)-N,N0-diphenyl-(1,1'-biphenyl)-4, 4'-diamine/VO2/fluorine-doped tin oxide
Author
박진성
Keywords
Hole injection barrier; UPS; Vanadium dioxide (VO2); XPS; Energy level alignment; Fluorine-doped tin oxide (FTO)
Issue Date
2015-01
Publisher
ELSEVIER SCIENCE BV
Citation
ORGANIC ELECTRONICS, v. 16, Page. 133-138
Abstract
Energy level alignments at the interface of N,N0-di(1-naphthyl)-N,N0-diphenyl-(1,10-biphenyl)- 4,40-diamine (NPB)/VO2/fluorine-doped tin oxide (FTO) were studied by photoemission spectroscopy. The overall hole injection barrier between FTO and NPB was reduced from 1.38 to 0.59 eV with the insertion of a VO2 hole injection layer. This could allow direct hole injection from FTO to NPB through a shallow valence band of VO2. Surprisingly, VO2 can also act as a charge generation layer due to its small band gap of 0.80 eV. That is, its conduction band is quite close to the Fermi level, and thus electrons can be extracted from the highest occupied molecular orbital (HOMO) of NPB, which is equivalent to hole injection into the NPB HOMO. 2014 Elsevier B.V. All rights reserved.
URI
http://hdl.handle.net/20.500.11754/21388http://www.sciencedirect.com/science/article/pii/S1566119914004960
ISSN
1566-1199
DOI
10.1016/j.orgel.2014.10.044
Appears in Collections:
COLLEGE OF ENGINEERING[S](공과대학) > MATERIALS SCIENCE AND ENGINEERING(신소재공학부) > Articles
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