Recent progress in high performance and reliable n-type transition metal oxide-based thin film transistors

Title
Recent progress in high performance and reliable n-type transition metal oxide-based thin film transistors
Authors
정재경
Keywords
field-effect transistors; high performance; metal oxide
Issue Date
2015-01
Publisher
IOP PUBLISHING LTD
Citation
SEMICONDUCTOR SCIENCE AND TECHNOLOGY, Volume 30, Number 2 , Page. 24002-24017
Abstract
This review gives an overview of the recent progress in vacuum-based n-type transition metal oxide (TMO) thin film transistors (TFTs). Several excellent review papers regarding metal oxide TFTs in terms of fundamental electron structure, device process and reliability have been published. In particular, the required field-effect mobility of TMO TFTs has been increasing rapidly to meet the demands of the ultra-high-resolution, large panel size and three dimensional visual effects as a megatrend of flat panel displays, such as liquid crystal displays, organic light emitting diodes and flexible displays. In this regard, the effects of the TMO composition on the performance of the resulting oxide TFTs has been reviewed, and classified into binary, ternary and quaternary composition systems. In addition, the new strategic approaches including zinc oxynitride materials, double channel structures, and composite structures have been proposed recently, and were not covered in detail in previous review papers. Special attention is given to the advanced device architecture of TMO TFTs, such as back-channel-etch and self-aligned coplanar structure, which is a key technology because of their advantages including low cost fabrication, high driving speed and unwanted visual artifact-free high quality imaging. The integration process and related issues, such as etching, post treatment, low ohmic contact and Cu interconnection, required for realizing these advanced architectures are also discussed.
URI
http://hdl.handle.net/20.500.11754/21248http://iopscience.iop.org/article/10.1088/0268-1242/30/2/024002/meta;jsessionid=DF49360B646F5B612786AC8813C4D6C4.c3.iopscience.cld.iop.org
ISSN
0268-1242
DOI
http://dx.doi.org/10.1088/0268-1242/30/2/024002
Appears in Collections:
COLLEGE OF ENGINEERING[S](공과대학) > DEPARTMENT OF ELECTRONIC ENGINEERING(융합전자공학부) > Articles
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