Enhanced photocurrent of Ge-doped InGaO thin film transistors with quantum dots

Title
Enhanced photocurrent of Ge-doped InGaO thin film transistors with quantum dots
Author
박진성
Keywords
PHOTOCURRENTS; GERMANIUM; DOPED semiconductors; INDIUM compounds; THIN film transistors; QUANTUM dots; ULTRAVIOLET radiation; ENERGY gaps (Physics)
Issue Date
2015-01
Publisher
AMER INST PHYSICS
Citation
APPLIED PHYSICS LETTERS, v. 106, NO 3, Page. 1-5
Abstract
The photocurrent of germanium-doped indium-gallium oxide (GIGO) thin film transistors (TFTs) can be observed when the device is exposed to a ultra-violet light because GIGO is a wide band gap semiconducting material. Therefore, we decorated cadmium selenide (CdSe) quantum-dots (QDs) on the surface of GIGO to increase the photocurrent for low-energy light, i.e., visible light. A 10 nm GIGO film was deposited on the SiO2/Si substrate by a radio frequency sputter system. Also, we prepared CdSe QDs with sizes of similar to 6.3 nm, which can absorb red visible light. QDs were spin-coated onto the GIGO film, and post-annealing was done to provide cross-linking between QDs. The prepared devices showed a 231% increase in photocurrent when exposed to 650 nm light due to the QDs on the GIGO surface. Measurements to construct an energy level diagram were made using ultraviolet photoelectron spectroscopy to determine the origin of the photocurrent, and we found that the small band gap of CdSe QDs enables the increase in photocurrent in the GIGO TFTs. This result is relevant for developing highly transparent photosensors based on oxide semiconductors and QDs. (C) 2015 AIP Publishing LLC.
URI
http://hdl.handle.net/20.500.11754/21247http://aip.scitation.org/doi/10.1063/1.4906423
ISSN
0003-6951
DOI
10.1063/1.4906423
Appears in Collections:
COLLEGE OF ENGINEERING[S](공과대학) > MATERIALS SCIENCE AND ENGINEERING(신소재공학부) > Articles
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