Repository at Hanyang UniversityCOLLEGE OF SCIENCE AND CONVERGENCE TECHNOLOGY[E](과학기술융합대학)CHEMICAL AND MOLECULAR ENGINEERING(화학분자공학과)Articles
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Upgraded Silicon Nanowires by Metal-Assisted Etching of Metallurgical Silicon: A New Route to Nanostructured Solar-Grade Silicon
- Title
- Upgraded Silicon Nanowires by Metal-Assisted Etching of Metallurgical Silicon: A New Route to Nanostructured Solar-Grade Silicon
- Author
- 방진호
- Keywords
- metal assisted chemical etching; metallurgical silicon; silicon nanowire; metal impurities; photoelectrochemical cell
- Issue Date
- 2013-06
- Publisher
- WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim
- Citation
- Advanced Materials, v. 25, NO. 23, Page. 3187-3191
- Abstract
- Through metal-assisted chemical etching (MaCE), superior purification of dirty Si is observed, from 99.74 to 99.9884% for metallurgical Si and from 99.999772 to 99.999899% for upgraded metallurgical Si. In addition, large areas of silicon nanowires (SiNW) are fabricated. The purification effect induces a similar to 35% increase in photocurrent for a SiNW based photoelectrochemical cell.
- URI
- https://onlinelibrary.wiley.com/doi/10.1002/adma.201300973https://repository.hanyang.ac.kr/handle/20.500.11754/181768
- ISSN
- 0935-9648;1521-4095
- Appears in Collections:
- COLLEGE OF SCIENCE AND CONVERGENCE TECHNOLOGY[E](과학기술융합대학) > CHEMICAL AND MOLECULAR ENGINEERING(화학분자공학과) > Articles
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