Effect of Wet-ceria synthesized by supercritical process on high topographic Polymer-film Chemical-Mechanical-Planarization

Abstract

Recently technology that stores and processes numerous data is important. The semiconductor market also demands miniaturization and high-level technology. New processes and methods are being introduced with the development of technology. In this paper, particle synthesis and polishing for polishing polymer films used in various roles in the semiconductor market were dealt with. Polymer film polishing with conventional particles has problems with scratches and polishing rates. Unlike conventional particles, other synthetic methods and materials have improved the problems of conventional polymer films. In this paper, ceria particles are synthesized through hydrothermal synthesis using zwitterions. Conventional ceria polishing has high defect and low polishing rate. The relatively angular shape of the grain causes high scratches, and the small grain size shows a low polishing rate. The separation layer between ceria and organic matter, which is initially added by hydrothermal synthesis, forms a homogeneous phase when heated, andorganically modified particles are automatically extracted when cooled. The formed particles have a large size. Conventional ceria particles have a step difference of 8µm after polishing, but the synthesized particles have a step difference of 0.4µm. The synthesized particles produce a slurry that efficiently removes the step difference. In addition, the synthesized particles have a round shape. Comparing the scratches, the synthesized ceria has a lower scratch than the conventional ceria and zirconia. Low scratch increases process efficiency and improves performance. Ceria particle synthesis and slurry implemented based on the research results of this paper are expected to be new solutions for nextgeneration processes.