The effect of oxygen partial pressure on band gap modulation of Ga2O3 grown by pulsed laser deposition
- Title
- The effect of oxygen partial pressure on band gap modulation of Ga2O3 grown by pulsed laser deposition
- Author
- 김은규
- Keywords
- Ga2O3; Band gap; Oxygen; Vacancy
- Issue Date
- 2019-10
- Publisher
- ELSEVIER SCIENCE SA
- Citation
- JOURNAL OF ALLOYS AND COMPOUNDS, v. 806, Page. 874-880
- Abstract
- The influence of oxygen partial pressure and annealing on the properties of thin films of beta-Ga2O3 grown by pulsed laser deposition were studied. The Ga2O3 samples were deposited at a substrate temperature of 250 degrees C at an oxygen pressure of 0-50 mTorr and then annealed at a temperature of 600 degrees C. We observed the crystallinity of Ga2O3 enhanced with annealing and with increasing oxygen pressure. The full width at half maximum of annealed beta -Ga2O3 ((4) over bar 01) peaks decreased, corresponding to the grain size increasing from 6.76 nm to 11.25 nm. The conductivity of the obtained, as-grown Ga2O3 films increased with oxygen pressure from 2.1 to 7.9 mScm(-1). As a result, the conductance and the energy band gap of beta-Ga2O3 without annealing were controlled by the oxygen partial pressure. This was attributed to the oxygen vacancies, based on the composition ratio between O and Ga ions. These results clearly showed that the energy band gap and conductance of beta-Ga2O3 thin films could be controlled in such a way that could be utilized for high-performance photo-electronic devices. (C) 2019 Elsevier B.V. All rights reserved.
- URI
- https://www.sciencedirect.com/science/article/pii/S0925838819328415?via%3Dihubhttps://repository.hanyang.ac.kr/handle/20.500.11754/154371
- ISSN
- 0925-8388; 1873-4669
- DOI
- 10.1016/j.jallcom.2019.07.326
- Appears in Collections:
- COLLEGE OF NATURAL SCIENCES[S](자연과학대학) > PHYSICS(물리학과) > Articles
- Files in This Item:
There are no files associated with this item.
- Export
- RIS (EndNote)
- XLS (Excel)
- XML