광산발생제를 포함하는 아크릴 레지스트의 전자빔 리소그래피

Abstract

Non-amplified resists such as PMMA or ZEP, and HSQ for electron beam lithography would be option to development of electron beam resists with high resolution property because of their non-acid diffusion and therefore high resolution patterns, but are write times limited compared to chemically amplified resists due to their lower sensitivity. A non-amplified copolymer resist synthesized by polymerizing with methylmethacrylate (MMA) and photoacid generator (PAG) monomers which have triphenyl sulfonium groups. The initial decomposition temperature of synthesized Acrylic resist containing PAG appeared about 300 °C. The PAG content was regulated to control thermal stability and sensitivity. The synthesized polymers containing PAG units were characterized by various analytical equipments. The copolymer could be presented to the patterns which have 15 nm line widths with sensitivity of 105 μC/cm², and pitch of 300 nm. The resist combines the performance advantages of both a sensitivity of photoresist and resolution of non-amplified resists. The extensive cross-linking by trapped PAG in copolymer chain limits photoacid diffusion during resist processing, thus allowing for high resolution.