ICP plasma Source를 이용한 Bevel 지역 건식 식각 공정 개발

Abstract

Bevel etch process is needed because of decreasing design rule, requiring additional process steps, being complicate device technology, process integration flow and new material incorporation. It was found that the particles from bevel area drop the yield of each wafer because the particles which was cut off from bevel area blows into the wafer center area that causes yield loss, so to remove these particles which comes from the bevel area, these particles should be removed clearly in advance of the step where the count of particles is increased. And also it from some DRAM and Logic semiconductor companies was reported that the yield should be increased by clearing the particles around bevel area. Actually I found BKM (best known method) recipe that showed yield increasement with tuning the bevel etch process parameters that contain source/bias power, process pressure, gas flow rate, process gap and GDP diameter size. I Think there is still a room to increase yield improvement through bevel etch process. Now days it expects growth in global semiconductor sales to halve a coming year on increased supply. I think this is a just in time to apply the bevel etch process that is going to increase yield up tremendously and gives a great profits to the companies that select this process. So I 'm focusing on developing bevel etch process better yield up by using process parameters and hardware development.