Design of Ultra-Wideband RF CMOS Low Noise Amplifier

Abstract

In this thesis, two Ultra-wideband low noise amplifiers (LNA) are presented. First amplifier is a high-gain LNA employing the inverter type current-reused technique. Second amplifier is 3.4mW low power ultra-wideband LNA utilizing common-gate amplifier as an input device with the current-reused technique. A high-gain wideband low noise amplifier (LNA) employing the current-reuse technique is proposed. Current-reuse technique adopted in the first stage brings an exceptionally high gain due to the summation of transconductances of nMOS and pMOS and shows wide input matching with the aids of source inductors and load effects. The proposed first LNA achieves lower than 9-dB input matching over 2.9-9.7 GHz, a minimum noise figure of 4.07 dB, a maximum power gain of 21 dB, and power gain bandwidth product of 591 while consuming 12.8 mW from 7.1 mA and 1.8 V. The proposed LNA is fabricated in 0.18-μm CMOS process. 3.4mW low power ultra-wideband LNA utilizing common-gate amplifier with current-reused technique is also proposed. Input impedance of common-gate amplifier facilitates wide input matching and drives a low DC current. With the aid of current reused-technique, the proposed LNA takes the advantage of power consumption as well. The proposed second LNA achieves lower than 10-dB input matching over 3.1-10.6 GHz, a minimum noise figure of 4.6 dB, input third-order intercept point of -11.2 dBm, a maximum power gain of 14.8 dB while consuming 3.37 mW from 2.25 mA and 1.5 V. The proposed LNA is fabricated in 0.18-μm CMOS process.