HVPE를 이용한 일차원구조 AlN:Mn의 광학적 특성연구

Abstract

Recently, AlN and its alloys with GaN and InN became the basic materials for short-wavelength optoelctronics. This was mainly due to their direct bandgaps covering the whole visible spectrum and a large part of the UV range (6.2 , 3.4 , and 1.9 eV for AlN, GaN, and InN, respectively). Major developments in wide-bandgap III-V nitride semiconductors have recently led to the commercial production of high-temperature, high-power electron devices, field emission display(FED), light emitting diodes (LEDs). In this study, AlN nanorods were grown on the horizontal reactors by the halide vapor phase epitaxy (HVPE) with vapor-solid mechanism. In many studies, it have reported how to control of the diameter size in the liquid phase catalytic process but one-dimensional nanostructures, which are grown using non-catalytic process, have been relatively unexplored, due to the synthetic challenge of producing high-quality materials of controlled size. But vapor-solid mechanism is simple to make the synthesized nanorods. As the results, the AlN nano-structures were grown along the c-axis and preferentially oriented with their growth direction perpendicular to the substrate. The morphology and crystallinity of AlN nanorods were characterized by FE-SEM (JSM - 6340F, hanyang univ), HRTEM(JEOL,JP/JEM-1010,kbsi) and XRD(D/MAX-2500/PC, hanyang univ). The chemical composition was analyzed by energy dispersive x-ray spectroscopy. The optical property was investigated by PL measurement.