방사선 기술을 이용한 금속 전구체가 함유된 고분자 레지스트의 패턴형성

Abstract

In this study, a facile and effective method for the patterning of polymer resist containing metal precursors via ion irradiation was described. Thin Pluronic (F-127) and poly(N-vinylpyrrolidone) (PVP) films containing HAuCl_(4) precursor were irradiated through a pattern mask with 200 keV H^(+) ions at various fluences ranging from 1 x 10^(15) to 1 x 10^(16) ions/cm^(2) and developed with distilled water to generate Pluronic and PVP patterns containing Au nanoparticles (Au NPs). Afterwards, the formed Pluronic and PVP patterns underwent oxygen plasma etching to eliminate the polymer matrix. The results of the scanning electron microscopic analysis with an energy dispersive X-ray and UV-Vis spectroscopy analysis revealed that, for both of Pluronic and PVP, well-defined 50 μm line (pitch 100 μm) patterns containing Au NPs were successfully formed at all the given fluences. In addition, an optimum duration of oxygen plasma etching to remove Pluronic and PVP was 15 and 60 min, respectively. The formation of Au NPs was investigated by using an X-ray diffractometer. The results demonstrated that Au NPs were successfully generated in Pluronic and PVP patterns at all the given fluences by ion irradiation and the patterns were changed into the patterns of Au NPs by oxygen plasma etching.