습식전해전착법을 이용한 CuIn(Se,S)2 태양전지 제조

Abstract

To manufacture low cost and high efficiency photovoltaic cell, CuIn(Se,S)2 thin film was deposited by electrochemical deposition process. The dependence of selenious acid concentration on morphology of thin film was investigated. The effects of flow cell were studied to improve the surface morphology and remove the secondary phase. The effects of sulfurization temperature and time on CuIn(Se,S)2 (CISeS) thin film solar cell have been investigated. 1㎛-CuInSe2 layer was deposited on Mo/SLG(soda lime glass) at room temperature by electrodeposition method. To form CuIn(Se,S)2 thin film, thin films were annealed in 5% H2S-95% Ar atmosphere at 350-575℃. As the sulfurization temperature increased, the grain growth of CISeS films was improved and the ratio of Se/S decreased, then the optical bandgap was close to ideal value for solar cell (~1.4eV). However, MoS2 layers appeared at high temperature (≥500℃) and the film morphology was getting more porous with increasing temperature. As a result, the conversion efficiency decreased as the sulfurization temperature increased, and increased as the sulfurization time increased. The maximum value of the conversion efficiency was 3.48% which was annealed at 425℃for 60 min.