Acid Diffusion of Photoacid Generator Bound Polymer for ArF Lithography

Abstract

Photoacid generators (PAGs) have been widely used as a key component for improving photoresist performance. The acid diffusion influences on the photoresist characteristics of resolution and line edge roughness (LER). The PAG bound polymer resist has been a key component for solving the problems of PAG aggregation and acid diffusion control. A triphenylsulfonium methyl methacrylate (TPSMA) as PAG was synthesized and copolymerized with monomer (glycidyl methacrylate or ethyl adamantly methacrylate) and methyl methacrylate by radical reaction for a new PAG bound polymer resist. The characterization of resist polymers was carried out by 1H NMR, TGA and GPC. The lithographic performance of photoresists was investigated by ArF lithography. Both PAG bound resist and the PAG blend resist were employed to demonstrate the effect of PAG unit in a resist system. The polymer bound PAG resist improved the LER and showed a higher resolution than the PAG blend resist.