High performance and stability of flash memory device with crystalline indium gallium oxide (IGO) channel material

Abstract

Flash memory is a kind of non volatile memory, even if the power will not occur data loss It also has the advantages of light weight, low energy consumption, small volume and strong seismic resistance and has a very wide range of applications in a variety of storage devices. In various types of flash memory devices, the charge trapping flash m emory device uses the electron trap in the charge trapping layer (CTL) to capture electrons to complete the programming operation. CTL is an insulating oxide, and the trapped electrons are not easily lost, so the performance is excellent and has a high development prospect. In the flash memory device, in addition to improving the more critical blocking layer/charge trapping layer/tunneling layer to optimize the device, using more excellent channel material is also an important means to improve flash memory performance. New oxide semiconductor materials have gained a lot of attention since their discovery. Compared with traditional silicon semiconductor materials, they have many advantages, such as higher electron mobility, lower leakage current, higher material stability and higher transparency. As a channel material, many achievements have been made in the display field, among which indium gallium zinc oxide (IGZO) and indium gallium oxide (IGO) materials are more prominent. Moreover, by crystallizing the oxide

semiconductor by heat treatment, the material properties can be improved to a more advanced level.

to a more advanced level.Therefore, combining the above two technologies to produce a charge trapping flash memory device using a crystalline oxide semiconductor as a channel material will have better performance. In this study, we use SiO2 /Si3N4 /Al2O3 are used for blocking layer, charge trapping layer and tunneling layer of flash memory device. The atomic layer deposit ed (ALD) IGO is heat treated for one hour in an oxygen atmosphere at a temperature of 700 to break the interatomic bond in the amorphous IGO, rearrange the atoms into bonds, and obtain crystallized IGO for channel of flash memory device. Compared with flash memory device based on a IGZO channel A higher field effect mobility μ FE 6 8.4 1 cm 2 /V · s) and a wider memory window (~1.25V) were measured, and the lifetime of the device for more than 10 years and the endurance of 10 4 cycles or more were verified. The needs of the actual application. This can meet the needs of practical applications. The application of flash memory device based on c IGO can further improve

the performance of storage devices, which will have far reaching significance for future development.|플래시 메리는 전원이 공급되지 않아도 데이터를 저장할 수 있는 비 휘발성 메모리이다. 또한 낮은 에너지 소비, 가볍고 적은 부피 및 강한 내구성의 장점을 가지며 다양한 저장 장치에 매우 광범위하게 응용되고 있다. 다양한 종류의 플래시 메모리 장치에서, 플래시 메모리 장치는 charge trapping layer (CTL)의 전자 트랩을 사용하여 전자를 저장하여 프로그래밍 동작이 된다. CTL은 절연 산화물이며, 포획 된 전자는 쉽게 손실되지 않기 때문에 성능이 우수하고 추후 개발 전망성이 높다. 플래시 메모리 장치에서, 장치를 최적화하기 위해보다 중요한 blocking layer/charge trapping layer/tunneling layer을 개선 할뿐만 아니라, 우수한 채널 재료를 사용하는 것도 플래시 메모리 성능을 향상시키는 중요한 수단이다. 특히, 새로운 산화물 반도체 재료는 발견 이후 많은 주목을 받고 있다. 기존의 실리콘 반도체 재료와 비교하여 전자 이동성, 누설 전류, 재료 안정성 및 투명성 등 많은 장점이 있다. 채널 재료로서, 디스플레이 분야에서 많은 성과가 이루어졌으며, 그 중에서도 indium gallium zinc oxide (IGZO) 및 indium gallium oxide (IGO) 재료가 더 두드러진다. 또한, 열처리에 의해 산화물 반도체를 결정화함으로써, 재료 특성을보다 진보 된 수준으로 향상시킬 수있다. 따라서, 채널 재료로서 결정질 산화물 반도체를 사용하는 전하 트래핑 플래시 메모리 장치를 생성하기 위해 상기 두 기술을 결합하면 더 나은 성능을 가진다. 이 연구에서는 SiO2/Si3N4/Al2O3를 사용하여 플래시 메모리 장치의 blocking layer, charge trapping layer and tunneling layer 사용합니다. Atomic layer deposition (ALD) IGO를 700℃의 온도에서 산소 분위기에서 1 시간 동안 열처리하여 비정질 IGO의 원자간 결합을 끊고 원자를 결합으로 재배열하며 플래시 메모리 채널을 위한 결정화 된 IGO를 얻는다. 높은 field-effect mobility (μFE=68.41cm2/V.s) 및 더 넓은 memory window (~1.25V)을 측정하고 10 년 이상 장치의 수명과 104 회 이상의 내구성을 검증했다. 이러한 특성을 통해 실제 상용화된 제품의 요구를 충족시킬 수 있다. c-IGO 기반 플래시 메모리 장치를 적용하면 메모리 장치의 성능을 더욱 향상시킬 수 있으며, 이는 향후 개발에 큰 영향을 미친다.; Flash memory is a kind of non volatile memory, even if the power will not occur data loss It also has the advantages of light weight, low energy consumption, small volume and strong seismic resistance and has a very wide range of applications in a variety of storage devices. In various types of flash memory devices, the charge trapping flash m emory device uses the electron trap in the charge trapping layer (CTL) to capture electrons to complete the programming operation. CTL is an insulating oxide, and the trapped electrons are not easily lost, so the performance is excellent and has a high development prospect. In the flash memory device, in addition to improving the more critical blocking layer/charge trapping layer/tunneling layer to optimize the device, using more excellent channel material is also an important means to improve flash memory performance. New oxide semiconductor materials have gained a lot of attention since their discovery. Compared with traditional silicon semiconductor materials, they have many advantages, such as higher electron mobility, lower leakage current, higher material stability and higher transparency. As a channel material, many achievements have been made in the display field, among which indium gallium zinc oxide (IGZO) and indium gallium oxide (IGO) materials are more prominent. Moreover, by crystallizing the oxide

semiconductor by heat treatment, the material properties can be improved to a more advanced level.

to a more advanced level.Therefore, combining the above two technologies to produce a charge trapping flash memory device using a crystalline oxide semiconductor as a channel material will have better performance. In this study, we use SiO2 /Si3N4 /Al2O3 are used for blocking layer, charge trapping layer and tunneling layer of flash memory device. The atomic layer deposit ed (ALD) IGO is heat treated for one hour in an oxygen atmosphere at a temperature of 700 to break the interatomic bond in the amorphous IGO, rearrange the atoms into bonds, and obtain crystallized IGO for channel of flash memory device. Compared with flash memory device based on a IGZO channel A higher field effect mobility μ FE 6 8.4 1 cm 2 /V · s) and a wider memory window (~1.25V) were measured, and the lifetime of the device for more than 10 years and the endurance of 10 4 cycles or more were verified. The needs of the actual application. This can meet the needs of practical applications. The application of flash memory device based on c IGO can further improve

the performance of storage devices, which will have far reaching significance for future development.