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Energy generation and storage devices for self-powered wearable smart electronics

Title
Energy generation and storage devices for self-powered wearable smart electronics
Other Titles
웨어러블 스마트 기기를 위한 자가발전 에너지 발생 및 저장장치
Author
김재호
Alternative Author(s)
김재호
Advisor(s)
홍진표
Issue Date
2020-02
Publisher
한양대학교
Degree
Master
Abstract
This disseratation describes an experimental study on energy generation (TENG) and storage (SC) devices for self-powered system. First, we present one-dimensional (1D) thread-based highly stretchable triboelectric nanogenerators (HS-TENGs) by establishing a highly stretchable coaxial-type poly[styrene-b-isoprene-b-styrene] (SIS) elastomer tube. Carbon conductive ink is injected into the SIS tube as a core 1D electrode that remains almost unaffected even under 250% stretching because of its low Young’s modulus. To further facilitate power generation by the HS-TENG, a composite of barium titanate nanoparticles (BaTiO3 NPs) and polydimethylsiloxane (PDMS) is coated on the initial SIS tube to modulate the dielectric permittivity based on variations in the BaTiO3 NPs volume ratio. The 1D PDMS/BaTiO3 NP composite-coated SIS and a nylon 6-coated two-dimensional (2D) Ni–Cu conductive fabric are selected as triboelectric bottom and top layers, respectively. Woven HS-TENGs textiles yield consistent power output under various extreme and harsh conditions, including folded, stretched, and washed states. Second, we report the chalcogenide solution-based direct synthesis strategy for growing nanostructured configurations that increased the large active surface areas (CuSO_4 NWs and NFs). Single crystalline CuSO_4 nanostructures on Cu substrate are synthesized directly using an ammonium sulfide solution as the activation process. The remarkable material and morphological properties of CuSO_4 nanostructures ensures that they exhibit capacitance of 304.9 mF/cm^2 (CuSO_4 NWs) and 257.2 mF/cm^2 (CuSO_4 NFs) at a current density of 5 mA/cm^2. Moreover, the capacity retained 58.2 % (CuSO_4 NWs) and 98.5 % (CuSO_4 NFs) of the initial value after 20,000 cycles.
URI
http://dcollection.hanyang.ac.kr/common/orgView/000000111166http://repository.hanyang.ac.kr/handle/20.500.11754/123296
Appears in Collections:
GRADUATE SCHOOL[S](대학원) > NANOSCALE SEMICONDUCTOR ENGINEERING(나노반도체공학과) > Theses (Master)
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