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Deposition of the molybdenum oxide thin films by ALD

Title
Deposition of the molybdenum oxide thin films by ALD
Author
최연식
Alternative Author(s)
최연식
Advisor(s)
전형탁
Issue Date
2020-02
Publisher
한양대학교
Degree
Master
Abstract
차세대 반도체 물질로서 2차원 물질이 대두되고 있는 가운데, 다양한 2차원 물질 중에서도 전이금속 산화물의 2차원 물질의 특성이 독특하여 이에 관한 연구가 지속적으로 이어지고 있다. 그 중에서도 특히 몰리브덴 산화물의 경우는 상에 따라 다른 특성을 가지게 되는 물질로서 몰리브덴 이산화물의 상에서는 전도도가 높은 전도체의 성질을 가지며, 몰리브덴 삼산화물의 상에서는 부도체의 성질을 가진다. 이 두 몰리브덴 산화물은 주로 이온 배터리의 초고용량 축전지로 이용되며, 몰리브덴 이산화물은 높은 일함수를 가지기 때문에 p타입 기반 소자의 전극으로 쓰일 수 있으며, 몰리브덴 삼산화물은 높은 k값을 가지기 때문에 소자의 산화물 절연체로 쓰일 수 있다. 본 논문에서는 이처럼 다양한 활용이 가능한 몰리브덴 산화물을 원자층 증착법을 이용하여 증착 하였으며, 전계방출형 주사 전자현미경 분석을 통해 박막의 두께와 증착을 가시적으로 확인하였으며, X선 광전자 분광법을 통해 증착 온도를 변수로 하여 박막의 정량적 분석을 하였다. 그 결과 증착 온도가 높아질수록 몰리브덴 이산화물에 더 가까워지는 것을 확인하였으며, 홀 측정을 통해 역시 증착 온도에 증가에 따른 전도도의 증가를 확인하였으며, 온도가 높아질수록 몰리브덴 이산화물에 더 가까워지는 것과 일치하는 경향성을 보였다. | One of the transition metal oxides (TMOs), molybdenum oxide (MoOx) thin films were deposited by atomic layer deposition (ALD) using Mo precursor and H2O reactant at various deposition temperatures from 200 to 450 °C. In order to investigate characteristics of the MoOx thin films, thickness of the thin films, chemical bonding states, and electrical properties were studied. By the field emission scanning electron microscope (FE-SEM) analysis, it is confirmed that thickness of the MoOx thin films deposited at 300, 350, and 400 °C were nearly constant. In addition, MoOx thin films deposited at 300 and 400 °C were close to MoO2 phase confirmed by X-ray photoelectron spectroscopy (XPS) analysis. And the MoOx thin films had more Mo4+ peaks than Mo6+ peaks at 400 °C. In order to investigate electrical properties, Hall measurement was prepared. In this analysis, carrier concentration decreased and Hall mobility increased as the deposition temperature increased to 400 °C.
One of the transition metal oxides (TMOs), molybdenum oxide (MoOx) thin films were deposited by atomic layer deposition (ALD) using Mo precursor and H2O reactant at various deposition temperatures from 200 to 450 °C. In order to investigate characteristics of the MoOx thin films, thickness of the thin films, chemical bonding states, and electrical properties were studied. By the field emission scanning electron microscope (FE-SEM) analysis, it is confirmed that thickness of the MoOx thin films deposited at 300, 350, and 400 °C were nearly constant. In addition, MoOx thin films deposited at 300 and 400 °C were close to MoO2 phase confirmed by X-ray photoelectron spectroscopy (XPS) analysis. And the MoOx thin films had more Mo4+ peaks than Mo6+ peaks at 400 °C. In order to investigate electrical properties, Hall measurement was prepared. In this analysis, carrier concentration decreased and Hall mobility increased as the deposition temperature increased to 400 °C.
URI
http://dcollection.hanyang.ac.kr/common/orgView/000000111722http://repository.hanyang.ac.kr/handle/20.500.11754/123294
Appears in Collections:
GRADUATE SCHOOL[S](대학원) > NANOSCALE SEMICONDUCTOR ENGINEERING(나노반도체공학과) > Theses (Master)
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