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dc.contributor.author박진구-
dc.date.accessioned2020-01-13T06:13:53Z-
dc.date.available2020-01-13T06:13:53Z-
dc.date.issued2019-01-
dc.identifier.citationECS JOURNAL OF SOLID STATE SCIENCE AND TECHNOLOGY, v. 8, No. 5, Page. 3028-3034en_US
dc.identifier.issn2162-8769-
dc.identifier.urihttp://jss.ecsdl.org/content/8/5/P3028.short-
dc.identifier.urihttp://repository.hanyang.ac.kr/handle/20.500.11754/121741-
dc.description.abstractIn this study, the development of post-chemical mechanical polishing (CMP) protocols for cleaning abrasive nanoparticles from In 0.53 Ga 0.47 As surfaces was systematically analyzed. Abrasive silica nanoparticles (130 and 289 nm) were intentionally deposited onto InGaAs surfaces. Various concentration ratios of chemical etchants such as HCl and H 2 O 2 were used to control material loss and surface oxides of InGaAs. The optimal concentration ratio of the HCl/H 2 O 2 cleaning solution exhibited 40% particle removal efficiency (PRE). Application of megasonic (MS) cleaning improved the PRE to 80%. To prevent particle re-contamination, ammonium dodecyl sulfate (ADS) was used as an anionic surfactant to modify surface charge in the InGaAs substrate. Addition of surfactant further improved the PRE to over 96%. Optimal cleaning of InGaAs surfaces was achieved with a combination of HCl/H 2 O 2 , surfactant, and MS.en_US
dc.description.sponsorshipThis work was supported by the Samsung Electronics' University R&D program [Physical/Chemical Research on General Defect Generation].en_US
dc.language.isoen_USen_US
dc.publisherELECTROCHEMICAL SOC INCen_US
dc.subjectMicroelectronics - Semiconductor Processingen_US
dc.subjectADS surfactanten_US
dc.subjectInGaAsen_US
dc.subjectpost CMP cleaningen_US
dc.titlePost-CMP Cleaning of InGaAs Surface for the Removal of Nanoparticle Contaminants for Sub-10nm Device Applicationsen_US
dc.typeArticleen_US
dc.relation.no5-
dc.relation.volume8-
dc.identifier.doi10.1149/2.0051905jss-
dc.relation.page3028-3034-
dc.relation.journalECS JOURNAL OF SOLID STATE SCIENCE AND TECHNOLOGY-
dc.contributor.googleauthorChoi, In-Chan-
dc.contributor.googleauthorKim, Hyun-Tae-
dc.contributor.googleauthorYerriboina, Nagendra Prasad-
dc.contributor.googleauthorLee, Jung-Hwan-
dc.contributor.googleauthorTeugels, Lieve-
dc.contributor.googleauthorKim, Tae-Gon-
dc.contributor.googleauthorPark, Jin-Goo-
dc.relation.code2019038296-
dc.sector.campusE-
dc.sector.daehakCOLLEGE OF ENGINEERING SCIENCES[E]-
dc.sector.departmentDEPARTMENT OF MATERIALS SCIENCE AND CHEMICAL ENGINEERING-
dc.identifier.pidjgpark-
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COLLEGE OF ENGINEERING SCIENCES[E](공학대학) > MATERIALS SCIENCE AND CHEMICAL ENGINEERING(재료화학공학과) > Articles
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