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Post-CMP Cleaning of InGaAs Surface for the Removal of Nanoparticle Contaminants for Sub-10nm Device Applications

Title
Post-CMP Cleaning of InGaAs Surface for the Removal of Nanoparticle Contaminants for Sub-10nm Device Applications
Author
박진구
Keywords
Microelectronics - Semiconductor Processing; ADS surfactant; InGaAs; post CMP cleaning
Issue Date
2019-01
Publisher
ELECTROCHEMICAL SOC INC
Citation
ECS JOURNAL OF SOLID STATE SCIENCE AND TECHNOLOGY, v. 8, No. 5, Page. 3028-3034
Abstract
In this study, the development of post-chemical mechanical polishing (CMP) protocols for cleaning abrasive nanoparticles from In 0.53 Ga 0.47 As surfaces was systematically analyzed. Abrasive silica nanoparticles (130 and 289 nm) were intentionally deposited onto InGaAs surfaces. Various concentration ratios of chemical etchants such as HCl and H 2 O 2 were used to control material loss and surface oxides of InGaAs. The optimal concentration ratio of the HCl/H 2 O 2 cleaning solution exhibited 40% particle removal efficiency (PRE). Application of megasonic (MS) cleaning improved the PRE to 80%. To prevent particle re-contamination, ammonium dodecyl sulfate (ADS) was used as an anionic surfactant to modify surface charge in the InGaAs substrate. Addition of surfactant further improved the PRE to over 96%. Optimal cleaning of InGaAs surfaces was achieved with a combination of HCl/H 2 O 2 , surfactant, and MS.
URI
http://jss.ecsdl.org/content/8/5/P3028.shorthttp://repository.hanyang.ac.kr/handle/20.500.11754/121741
ISSN
2162-8769
DOI
10.1149/2.0051905jss
Appears in Collections:
COLLEGE OF ENGINEERING SCIENCES[E](공학대학) > MATERIALS SCIENCE AND CHEMICAL ENGINEERING(재료화학공학과) > Articles
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