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Selection and Optimization of Corrosion Inhibitors for Improved Cu CMP and Post-Cu CMP Cleaning

Title
Selection and Optimization of Corrosion Inhibitors for Improved Cu CMP and Post-Cu CMP Cleaning
Author
박진구
Keywords
Microelectronics - Semiconductor Processing; Corrosion inhibitor; Particle removal; Post-CMP
Issue Date
2019-02
Publisher
ELECTROCHEMICAL SOC INC
Citation
ECS JOURNAL OF SOLID STATE SCIENCE AND TECHNOLOGY, v. 8, No. 5, Page. 3058-3062
Abstract
Corrosion inhibitors play a key role in obtaining global planarization and protecting against corrosion during copper CMP. However, these inhibitors leave organic residues and increase particle contamination after the CMP process, which can directly affect the device yield. Cu CMP is usually performed with a slurry containing silica particles and a BTA corrosion inhibitor. High levels of organic defects and particle contamination are produced due to the high concentration of BTA used to meet CMP requirements. In this work a suitable corrosion inhibitor, 5-methyl-benzotriazole (MBTA), is proposed and used at an optimized concentration to remove organic residues and particle contamination effectively during the post-CMP process. The optimum inhibitor concentration was estimated for BTA and MBTA. Based on etching and EIS studies, it was found that a lower concentration of MBTA (relative to BTA) is needed to provide the conditions required for CMP. The passivation layer formed by MBTA can be removed easily during the post-CMP process. Thus, our results indicate that it is possible to reduce the concentration of the inhibitor while maintaining the same corrosion inhibition efficiency, thereby reducing the particle and organic defect levels.
URI
http://jss.ecsdl.org/content/8/5/P3058.shorthttp://repository.hanyang.ac.kr/handle/20.500.11754/121706
ISSN
2162-8769
DOI
10.1149/2.0101905jss
Appears in Collections:
COLLEGE OF ENGINEERING SCIENCES[E](공학대학) > MATERIALS SCIENCE AND CHEMICAL ENGINEERING(재료화학공학과) > Articles
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