13 0

Enhanced PbS quantum dot loading on TiO2 photoanode using atomic-layer-deposited ZnS interfacial layer for quantum dot-sensitized solar cells

Title
Enhanced PbS quantum dot loading on TiO2 photoanode using atomic-layer-deposited ZnS interfacial layer for quantum dot-sensitized solar cells
Author
방진호
Keywords
QDSSCs; Atomic layer deposition; Zinc sulfide; Interfacial layer; Quantum dots loading
Issue Date
2018-12
Publisher
ELSEVIER SCIENCE SA
Citation
MATERIALS CHEMISTRY AND PHYSICS, v. 220, page. 293-298
Abstract
Ultrathin and conformal ZnS film grown by atomic layer deposition was employed in quantum dot-sensitized solar cells (QDSSCs) as an interfacial layer (IL) between mesoporous TiO2 photoanode and successive ionic layer adsorption and reaction (SILAR)-grown PbS QDs. ZnS IL provided more nucleation sites compared to a bare TiO2 photoanode, which enhanced PbS QDs loading remarkably. As a result, the optical absorbance and thus photocurrent density considerably increased. The power conversion efficiency of QDSSCs increased from 3.4% to 4% by introducing the ZnS IL. However, the beta-recombination model obtained from electrochemical impedance spectroscopy revealed the evolution of charge carrier recombination inside QDs as a consequence of enhanced QD loading, which partly dilutes this benefit.
URI
https://www.sciencedirect.com/science/article/abs/pii/S0254058418307570?via%3Dihubhttp://repository.hanyang.ac.kr/handle/20.500.11754/121167
ISSN
0254-0584; 1879-3312
DOI
10.1016/j.matchemphys.2018.09.006
Appears in Collections:
GRADUATE SCHOOL[S](대학원) > BIONANOTECHNOLOGY(바이오나노학과) > Articles
Files in This Item:
There are no files associated with this item.
Export
RIS (EndNote)
XLS (Excel)
XML


qrcode

Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.

BROWSE