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Achieving High Mobility in IGTO Thin-Film Transistors at a Low Temperature via Film Densification

Title
Achieving High Mobility in IGTO Thin-Film Transistors at a Low Temperature via Film Densification
Author
정재경
Keywords
Densification; indium gallium tin oxide (IGTO); low temperature; mobility; sputtering; thin-film transistor (TFT)
Issue Date
2018-11
Publisher
IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
Citation
IEEE TRANSACTIONS ON ELECTRON DEVICES, v. 65, no. 11, page. 4854-4860
Abstract
The effects of chamber pressure (P-C) on the structural and chemical properties of an indium gallium tin oxide (IGTO) channel layer were examined. Smoother and denser IGTO films were obtained with decreasing P-C, which were explained based on the enhanced kinetic energy of sputtered particles due to fewer collisions with the plasma atmosphere. The resulting IGTO thin-film transistor exhibited a high mobility of 35.0 cm(2)/Vs, subthreshold gate swing of 0.17 V/decade, threshold voltage (V-TH) of -0.45 V, and I-ON/OFF ratio >10(8), even at a low annealing temperature of 150 degrees C.
URI
https://ieeexplore.ieee.org/document/8467548http://repository.hanyang.ac.kr/handle/20.500.11754/120770
ISSN
0018-9383; 1557-9646
DOI
10.1109/TED.2018.2868697
Appears in Collections:
COLLEGE OF ENGINEERING[S](공과대학) > ELECTRONIC ENGINEERING(융합전자공학부) > Articles
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