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dc.contributor.author박진성-
dc.date.accessioned2019-12-10T04:01:45Z-
dc.date.available2019-12-10T04:01:45Z-
dc.date.issued2018-11-
dc.identifier.citationJOURNAL OF VACUUM SCIENCE & TECHNOLOGY A, v. 36, no. 6, Article no. 060801en_US
dc.identifier.issn0734-2101-
dc.identifier.issn1520-8559-
dc.identifier.urihttps://avs.scitation.org/doi/10.1116/1.5047237-
dc.identifier.urihttp://repository.hanyang.ac.kr/handle/20.500.11754/120674-
dc.description.abstractThis article is a review of recent research and development advances in oxide thin film transistors (TFTs) fabricated by atomic layer deposition (ALD) processes. The ALD process is remarkable as it offers accurate control of film thickness and composition as well as the ability to achieve excellent uniformity over large areas at relatively low temperatures. Firstly, an introduction to n-type oxide TFTs is provided with a focus on the development of active-layer material combinations from binary oxide active layers, like zinc oxide and indium oxide, to ternary and quaternary oxide active layers formed by doping with elements such as gallium or tin to achieve high mobility and high device stability for TFTs. Secondly, ALD p-type channel oxide TFTs are also introduced, which are required for the realization of many types of low-power circuits, such as complementary metal oxide semiconductor devices. (c) 2018 Author(s). All article content, except where otherwise noted, is licensed under a Creative Commons Attribution (CC BY) license (http://creativecommons.org/licenses/by/4.0/).en_US
dc.description.sponsorshipThis research was supported by the MOTIE (Ministry of Trade, Industry & Energy) (Project Nos. 10051403, 10052020, and 10052027) and the KDRC (Korea Display Research Corporation). This work was supported by the Institute for Information & Communications Technology Promotion (IITP) grant funded by the Korea government (MSIT) (No. 2018-0-00202, Development of Core Technologies for Transparent Flexible Display Integrated Biometric Recognition Device).en_US
dc.language.isoen_USen_US
dc.publisherA V S AMER INST PHYSICSen_US
dc.subjectAL-DOPED ZNOen_US
dc.subjectROOM-TEMPERATUREen_US
dc.subjectDEVICE CHARACTERISTICSen_US
dc.subjectSTABILITY ENHANCEMENTen_US
dc.subjectELECTRICAL-PROPERTIESen_US
dc.subjectPLASMA TREATMENTen_US
dc.subjectPERFORMANCEen_US
dc.subjectGROWTHen_US
dc.subjectTINen_US
dc.subjectINSTABILITIESen_US
dc.titleReview Article: Atomic layer deposition for oxide semiconductor thin film transistors: Advances in research and developmenten_US
dc.typeArticleen_US
dc.relation.no6-
dc.relation.volume36-
dc.identifier.doi10.1116/1.5047237-
dc.relation.page60801-60801-
dc.relation.journalJOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-
dc.contributor.googleauthorSheng, Jiazhen-
dc.contributor.googleauthorLee, Jung-Hoon-
dc.contributor.googleauthorChoi, Wan-Ho-
dc.contributor.googleauthorHong, TaeHyun-
dc.contributor.googleauthorKim, MinJung-
dc.contributor.googleauthorPark, Jin-Seong-
dc.relation.code2018001740-
dc.sector.campusS-
dc.sector.daehakCOLLEGE OF ENGINEERING[S]-
dc.sector.departmentDIVISION OF MATERIALS SCIENCE AND ENGINEERING-
dc.identifier.pidjsparklime-
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COLLEGE OF ENGINEERING[S](공과대학) > MATERIALS SCIENCE AND ENGINEERING(신소재공학부) > Articles
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