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Review Article: Atomic layer deposition for oxide semiconductor thin film transistors: Advances in research and development

Title
Review Article: Atomic layer deposition for oxide semiconductor thin film transistors: Advances in research and development
Author
박진성
Keywords
AL-DOPED ZNO; ROOM-TEMPERATURE; DEVICE CHARACTERISTICS; STABILITY ENHANCEMENT; ELECTRICAL-PROPERTIES; PLASMA TREATMENT; PERFORMANCE; GROWTH; TIN; INSTABILITIES
Issue Date
2018-11
Publisher
A V S AMER INST PHYSICS
Citation
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A, v. 36, no. 6, Article no. 060801
Abstract
This article is a review of recent research and development advances in oxide thin film transistors (TFTs) fabricated by atomic layer deposition (ALD) processes. The ALD process is remarkable as it offers accurate control of film thickness and composition as well as the ability to achieve excellent uniformity over large areas at relatively low temperatures. Firstly, an introduction to n-type oxide TFTs is provided with a focus on the development of active-layer material combinations from binary oxide active layers, like zinc oxide and indium oxide, to ternary and quaternary oxide active layers formed by doping with elements such as gallium or tin to achieve high mobility and high device stability for TFTs. Secondly, ALD p-type channel oxide TFTs are also introduced, which are required for the realization of many types of low-power circuits, such as complementary metal oxide semiconductor devices. (c) 2018 Author(s). All article content, except where otherwise noted, is licensed under a Creative Commons Attribution (CC BY) license (http://creativecommons.org/licenses/by/4.0/).
URI
https://avs.scitation.org/doi/10.1116/1.5047237http://repository.hanyang.ac.kr/handle/20.500.11754/120674
ISSN
0734-2101; 1520-8559
DOI
10.1116/1.5047237
Appears in Collections:
COLLEGE OF ENGINEERING[S](공과대학) > MATERIALS SCIENCE AND ENGINEERING(신소재공학부) > Articles
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