Full metadata record
DC Field | Value | Language |
---|---|---|
dc.contributor.author | 김대훈 | - |
dc.date.accessioned | 2019-12-10T02:45:00Z | - |
dc.date.available | 2019-12-10T02:45:00Z | - |
dc.date.issued | 2018-11 | - |
dc.identifier.citation | ORGANIC ELECTRONICS, v. 62, page. 412-418 | en_US |
dc.identifier.issn | 1566-1199 | - |
dc.identifier.issn | 1878-5530 | - |
dc.identifier.uri | https://www.sciencedirect.com/science/article/pii/S1566119918304385?via%3Dihub | - |
dc.identifier.uri | https://repository.hanyang.ac.kr/handle/20.500.11754/120658 | - |
dc.description.abstract | Perovskite materials have been utilized as promising active materials for memristive devices due to their excellent properties. However, most reported perovskite-based memristive devices exhibit relatively low current ON/OFF ratios, which limits their practical applications in memory devices. In this work, memristive devices with a large memory margin were fabricated utilizing a CH3NH3PbBr3 (MAPbBr(3) ) perovskite layer. The nanocrystalline MAPbBr(3) perovskite thin films were successfully formed at low temperature by using a chlorobenzene dripping method. The MAPbBr(3) perovskite layer was employed as a resistive switching layer in memristive devices with a structure of indium-tin-oxide/poly(3,4-ethylenedioxythiophene):poly(styrenesulfonate)/MAPbBr(3)/Al. The maximum ON/OFF ratio of the memristive devices based on the MAPbBr(3) perovskite was as large as 3.6 x 10(6). The memristive devices showed high device-to-device reproducibility with set-voltage distributions between -0.5 and -0.8 V, as well as good endurances of at least 120 cycles and retention times longer than 1 x 10(4) s. The carrier transport mechanisms of the memristive devices were described on the basis of the I-V curves, and their operating mechanisms were explained via the formation and rupture of filaments in the MAPbBr(3) perovskite. | en_US |
dc.description.sponsorship | This research was supported by the Basic Science Research Program through the National Research Foundation of Korea (NRF) funded by the Ministry of Education, Science and Technology (2016R1A2A1A05005502). | en_US |
dc.language.iso | en_US | en_US |
dc.publisher | ELSEVIER SCIENCE BV | en_US |
dc.subject | Memristive devices | en_US |
dc.subject | MAPbBr(3) perovskite | en_US |
dc.subject | Electrical characteristics | en_US |
dc.subject | Carrier transport mechanism | en_US |
dc.subject | Operating mechanism | en_US |
dc.title | Memristive devices with a large memory margin based on nanocrystalline organic-inorganic hybrid CH3NH3PbBr3 perovskite active layer | en_US |
dc.type | Article | en_US |
dc.relation.volume | 62 | - |
dc.identifier.doi | 10.1016/j.orgel.2018.08.034 | - |
dc.relation.page | 412-418 | - |
dc.relation.journal | ORGANIC ELECTRONICS | - |
dc.contributor.googleauthor | Lee, Yong Hun | - |
dc.contributor.googleauthor | Kim, Dae Hun | - |
dc.contributor.googleauthor | Wu, Chaoxing | - |
dc.contributor.googleauthor | Kim, Tae Whan | - |
dc.relation.code | 2018003556 | - |
dc.sector.campus | S | - |
dc.sector.daehak | INDUSTRY-UNIVERSITY COOPERATION FOUNDATION[S] | - |
dc.sector.department | RESEARCH INSTITUTE | - |
dc.identifier.pid | kimdh8577 | - |
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