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Memristive devices with a large memory margin based on nanocrystalline organic-inorganic hybrid CH3NH3PbBr3 perovskite active layer

Title
Memristive devices with a large memory margin based on nanocrystalline organic-inorganic hybrid CH3NH3PbBr3 perovskite active layer
Author
김대훈
Keywords
Memristive devices; MAPbBr(3) perovskite; Electrical characteristics; Carrier transport mechanism; Operating mechanism
Issue Date
2018-11
Publisher
ELSEVIER SCIENCE BV
Citation
ORGANIC ELECTRONICS, v. 62, page. 412-418
Abstract
Perovskite materials have been utilized as promising active materials for memristive devices due to their excellent properties. However, most reported perovskite-based memristive devices exhibit relatively low current ON/OFF ratios, which limits their practical applications in memory devices. In this work, memristive devices with a large memory margin were fabricated utilizing a CH3NH3PbBr3 (MAPbBr(3) ) perovskite layer. The nanocrystalline MAPbBr(3) perovskite thin films were successfully formed at low temperature by using a chlorobenzene dripping method. The MAPbBr(3) perovskite layer was employed as a resistive switching layer in memristive devices with a structure of indium-tin-oxide/poly(3,4-ethylenedioxythiophene):poly(styrenesulfonate)/MAPbBr(3)/Al. The maximum ON/OFF ratio of the memristive devices based on the MAPbBr(3) perovskite was as large as 3.6 x 10(6). The memristive devices showed high device-to-device reproducibility with set-voltage distributions between -0.5 and -0.8 V, as well as good endurances of at least 120 cycles and retention times longer than 1 x 10(4) s. The carrier transport mechanisms of the memristive devices were described on the basis of the I-V curves, and their operating mechanisms were explained via the formation and rupture of filaments in the MAPbBr(3) perovskite.
URI
https://www.sciencedirect.com/science/article/pii/S1566119918304385?via%3Dihubhttp://repository.hanyang.ac.kr/handle/20.500.11754/120658
ISSN
1566-1199; 1878-5530
DOI
10.1016/j.orgel.2018.08.034
Appears in Collections:
INDUSTRY-UNIVERSITY COOPERATION FOUNDATION[S](산학협력단) > ETC
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