Vertical Flash Memory; Macaroni MOSFET; Electric Potential
AMER SCIENTIFIC PUBLISHERS
JOURNAL OF NANOSCIENCE AND NANOTECHNOLOGY, v. 18, no. 9, page. 5932-5935
This paper presents the analytical electric potentials of vertical flash memory with a macaroni structure derived by solving a one-dimensional Poisson equation for vertical flash memory. The solution provides the cross-sectional electric potentials between the surface and the inner oxide layer of the polysilicon channel in flash memory. The band bending and the charge density were obtained on the basis of the electric potential of the device, which is an important factor in flash memory operation. Additional parameters for the electric potentials in flash memory with a macaroni structure are described.