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Direct Probing of Cross-Plane Thermal Properties of Atomic Layer Deposition Al2O3/ZnO Superlattice Films with an Improved Figure of Merit and Their Cross-Plane Thermoelectric Generating Performance

Title
Direct Probing of Cross-Plane Thermal Properties of Atomic Layer Deposition Al2O3/ZnO Superlattice Films with an Improved Figure of Merit and Their Cross-Plane Thermoelectric Generating Performance
Author
박진성
Keywords
phonon transport; superlattice films; cross-plane thermoelectric properties; phonon scattering; thermal conductivity; Seebeck coefficient; 3-omega measurement
Issue Date
2018-10
Publisher
AMER CHEMICAL SOC
Citation
ACS APPLIED MATERIALS & INTERFACES, v. 10, no. 51, page. 44472-44482
Abstract
There is a recent interest in semiconducting superlattice films because their low dimensionality can increase the thermal power and phonon scattering at the interface in superlattice films. However, experimental studies in all cross-plane thermoelectric (TE) properties, including thermal conductivity, Seebeck coefficient, and electrical conductivity, have not been performed from these semiconducting superlattice films because of substantial difficulties in the direct measurement of the Seebeck coefficient and electrical conductivity. Unlike the conventional measurement method, we present a technique using a structure of sandwiched superlattice films between two embedded heaters as the heating source, and electrodes with two Cu plates, which directly enables the investigation of the Seebeck coefficient and electrical conductivity across the Al2O3/ZnO superlattice films, prepared by the atomic layer deposition method. Used in combination with the promising cross-plane four-point probe 3-omega method, our measurements and analysis demonstrate all cross-plane TE properties of Al2O3/ZnO superlattice films in the temperature range of 80 to 500 K. Our experimental methodology and the obtained results represent a significant advancement in the understanding of phonons and electrical transports in nanostructured materials, especially in semiconducting superlattice films in various temperature ranges.
URI
https://pubs.acs.org/doi/10.1021/acsami.8b15997http://repository.hanyang.ac.kr/handle/20.500.11754/120240
ISSN
1944-8244; 1944-8252
DOI
10.1021/acsami.8b15997
Appears in Collections:
COLLEGE OF ENGINEERING[S](공과대학) > MATERIALS SCIENCE AND ENGINEERING(신소재공학부) > Articles
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