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A Ru-Pt alloy electrode to suppress leakage currents of dynamic random-access memory capacitors

Title
A Ru-Pt alloy electrode to suppress leakage currents of dynamic random-access memory capacitors
Author
정두석
Keywords
DRAM; capacitor; Ru-Pt electrode; rutile TiO2
Issue Date
2018-09
Publisher
IOP PUBLISHING LTD
Citation
NANOTECHNOLOGY, v. 29, no. 45, Article no. 455202
Abstract
Rutile TiO2, a high temperature phase, has attracted interest as a capacitor dielectric in dynamic random-access memories (DRAMs). Despite its high dielectric constant of >80, large leakage currents caused by a low Schottky barrier height at the TiO2/electrode interface have hindered the use of rutile TiO2 as a commercial DRAM capacitor. Here, we propose a new Ru-Pt alloy electrode to increase the height of the Schottky barrier. The Ru-Pt mixed layer was grown by atomic layer deposition. The atomic ratio of Ru/Pt varied in the entire range from 100 at.% Ru to 100 at.% Pt. Rutile TiO(2)films were inductively formed only on the Ru-Pt layer containing <= 43 at.% Pt, while anatase TiO2 films with a relatively low dielectric constant (similar to 40) were formed at Pt compositions > 63 at.%. The Ru-Pt (40-50 at.%) layer also attained an increase in work function of similar to 0.3-0.4 eV, leading to an improvement in the leakage currents of the TiO2/Ru-Pt capacitor. These findings suggested that a Ru-Pt layer could serve as a promising electrode for next-generation DRAM capacitors.
URI
https://iopscience.iop.org/article/10.1088/1361-6528/aaddbchttp://repository.hanyang.ac.kr/handle/20.500.11754/120004
ISSN
0957-4484; 1361-6528
DOI
10.1088/1361-6528/aaddbc
Appears in Collections:
COLLEGE OF ENGINEERING[S](공과대학) > MATERIALS SCIENCE AND ENGINEERING(신소재공학부) > Articles
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