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Carrier Transport Mechanism via a High-k HfO2 Thin Layer Between GaAs Layers

Title
Carrier Transport Mechanism via a High-k HfO2 Thin Layer Between GaAs Layers
Author
김태환
Keywords
Tunneling Current; Leakage Current; GaAs; HfO2; Tight Binding Method
Issue Date
2018-09
Publisher
AMER SCIENTIFIC PUBLISHERS
Citation
JOURNAL OF NANOSCIENCE AND NANOTECHNOLOGY, v. 18, no. 9, page. 6014-6016
Abstract
Carrier transport mechanisms via a high-k gate dielectric material of hafnium dioxide (HfO2) between III-V GaAs were investigated by using a non-equilibrium Green's function (NEGF). The full band structure for the HfO2 layer was determined by using a sp(3)d(5)s* closest neighbor empirical tight-binding model. The band structure of the GaAs bulk was determined by using an empirical tight-binding model. The tunneling currents dependent on the thickness of the HfO2 layer with a GaAs layer were obtained by solving the NEGF in an open boundary condition. The applied voltage to obtain the tunneling currents through the HfO2 layer between the GaAs layers was higher than that for the SiHfO2/Si structure. This was due to the much smaller energy difference between the conduction band edge (E-c) and the Fermi level (E-f) of the Si layer than that of the GaAs layer. The GaAs/HfO2/GaAs structure showed an increase in the leakage current in comparison with the Si/HfO2/Si structure.
URI
https://www.ingentaconnect.com/content/asp/jnn/2018/00000018/00000009/art00030;jsessionid=1bgw83br32l2q.x-ic-live-01http://repository.hanyang.ac.kr/handle/20.500.11754/119968
ISSN
1533-4880; 1533-4899
DOI
10.1166/jnn.2018.15576
Appears in Collections:
COLLEGE OF ENGINEERING[S](공과대학) > ELECTRONIC ENGINEERING(융합전자공학부) > Articles
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