Full metadata record
DC Field | Value | Language |
---|---|---|
dc.contributor.author | 김은규 | - |
dc.date.accessioned | 2019-12-08T01:21:01Z | - |
dc.date.available | 2019-12-08T01:21:01Z | - |
dc.date.issued | 2018-05 | - |
dc.identifier.citation | SCIENTIFIC REPORTS, v. 8, Article no. 7814 | en_US |
dc.identifier.issn | 2045-2322 | - |
dc.identifier.uri | https://www.nature.com/articles/s41598-018-26290-y | - |
dc.identifier.uri | https://repository.hanyang.ac.kr/handle/20.500.11754/118608 | - |
dc.description.abstract | We report on the defect states incorporated in a-plane GaN crystals grown on r-plane sapphire substrates by hydride vapor phase epitaxy (HVPE), using deep level transient spectroscopy (DLTS). Two defect states were observed at 0.2 eV and 0.55 eV below the conduction band minimum with defect densities of 5 x 10(12)/cm(3) and 4.7 x 10(13)/cm(3), respectively. The size of capture cross section, non-linear relation of trap densities from the depth profile, filling pulse width, and PL measurements indicated that the electronic deep trap levels in a-plane GaN on r-plane sapphire by HVPE originated from non-interacting point defects such as N-Ga, complex defects involving Si, O, or C, and V-Ga-related centres. Even though the a-plane GaN templates were grown by HVPE with high growth rates, the electronic deep trap characteristics are comparable to those of a-plane GaN layers of high crystal quality grown by MOCVD. This study prove that the growth of a-plane GaN templates on r-plane sapphire by HVPE is a promising method to obtain a-plane GaN layers efficiently and economically without the degradation of electrical characteristics. | en_US |
dc.description.sponsorship | This research was supported by Basic Science Research Program through the National Research Foundation of Korea (NRF) funded by the Ministry of Education (2016R1A6A1A03012069) and the Korea Institute of Energy Technology Evaluation and Planning (KETEP) and the Ministry of Trade, Industry, & Energy (MOTIE) of the Republic of Korea (No. 20163030013380). | en_US |
dc.language.iso | en_US | en_US |
dc.publisher | NATURE PUBLISHING GROUP | en_US |
dc.subject | VAPOR-PHASE EPITAXY | en_US |
dc.subject | YELLOW LUMINESCENCE | en_US |
dc.subject | BUFFER LAYERS | en_US |
dc.subject | ACCEPTORS | en_US |
dc.title | Electronic states of deep trap levels in a-plane GaN templates grown on r-plane sapphire by HVPE | en_US |
dc.type | Article | en_US |
dc.relation.volume | 8 | - |
dc.identifier.doi | 10.1038/s41598-018-26290-y | - |
dc.relation.page | 7814-7818 | - |
dc.relation.journal | SCIENTIFIC REPORTS | - |
dc.contributor.googleauthor | Lee, Moonsang | - |
dc.contributor.googleauthor | Thi Kim Oanh Vu | - |
dc.contributor.googleauthor | Lee, Kyoung Su | - |
dc.contributor.googleauthor | Kim, Eun Kyu | - |
dc.contributor.googleauthor | Park, Sungsoo | - |
dc.relation.code | 2018003596 | - |
dc.sector.campus | S | - |
dc.sector.daehak | COLLEGE OF NATURAL SCIENCES[S] | - |
dc.sector.department | DEPARTMENT OF PHYSICS | - |
dc.identifier.pid | ek-kim | - |
dc.identifier.orcid | http://orcid.org/0000-0003-3373-963X | - |
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