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dc.contributor.author박진성-
dc.date.accessioned2019-12-08T00:45:40Z-
dc.date.available2019-12-08T00:45:40Z-
dc.date.issued2018-05-
dc.identifier.citationJOURNAL OF ALLOYS AND COMPOUNDS, v. 762, page. 881-886en_US
dc.identifier.issn0925-8388-
dc.identifier.issn1873-4669-
dc.identifier.urihttps://www.sciencedirect.com/science/article/abs/pii/S0925838818319662?via%3Dihub-
dc.identifier.urihttp://repository.hanyang.ac.kr/handle/20.500.11754/118578-
dc.description.abstractLithium (Li) doped zinc tin oxide (ZTO) films were successfully grown by mist chemical vapor deposition (mist-CVD) under ambient atmosphere at a relatively low process temperature (-350 degrees C). The effects of Li incorporation on the chemical and physical properties of the host ZTO semiconductor were studied, along with the electrical characteristics of the associated thin film transistors (TFTs). The devices incorporating Li-ZTO active layers grown with a 1 mol % Li precursor exhibit superior electrical performance, with representative saturation mobility of 24.7 cm(2)/V and on/off ratio of similar to 10(10), compared to pure ZTO TFTs (exhibiting a mobility of 14.6 cm(2)/V and on/off ratio of similar to 10(8)). Under negative bias temperature stress (NBTS), the Li-ZTO TFTs undergo relatively small threshold voltage shifts (Delta V-th) of approximately -0.42 V, while the undoped ZTO TFTs exhibit net Delta V(th )values near -3.21 V. Here it is suspected that Li ions enhance the device performance by contributing additional free carriers, while passivating the defects that act as carrier traps. Li doping is thus an effective way to improve both the charge transport properties and stability of ZTO semiconductor devices, which may be realized by means of a cost-effective mist-CVD process. (C) 2018 Elsevier B.V. All rights reserved.en_US
dc.description.sponsorshipThis work was supported by the Industry Technology R&D program of MOTIE (Ministry of Trade, Industry & Energy) [10051080] and KDRC (Korea Display Research Corporation) [10051403].en_US
dc.language.isoen_USen_US
dc.publisherELSEVIER SCIENCE SAen_US
dc.subjectMetal oxide semiconductoren_US
dc.subjectMist chemical vapor depositionen_US
dc.subjectThin film transistoren_US
dc.subjectZn-Sn-Oen_US
dc.titleSemiconductor behavior of Li doped ZnSnO thin film grown by mist-CVD and the associated device propertyen_US
dc.typeArticleen_US
dc.relation.volume762-
dc.identifier.doi10.1016/j.jallcom.2018.05.247-
dc.relation.page881-886-
dc.relation.journalJOURNAL OF ALLOYS AND COMPOUNDS-
dc.contributor.googleauthorLim, Jun Hyung-
dc.contributor.googleauthorJeong, Hyun-Jun-
dc.contributor.googleauthorOh, Keun-Tae-
dc.contributor.googleauthorKim, Dong-Hyun-
dc.contributor.googleauthorPark, Joon Seok-
dc.contributor.googleauthorPark, Jin-Seong-
dc.relation.code2018003394-
dc.sector.campusS-
dc.sector.daehakCOLLEGE OF ENGINEERING[S]-
dc.sector.departmentDIVISION OF MATERIALS SCIENCE AND ENGINEERING-
dc.identifier.pidjsparklime-
dc.identifier.orcidhttps://orcid.org/0000-0002-9070-5666-
Appears in Collections:
COLLEGE OF ENGINEERING[S](공과대학) > MATERIALS SCIENCE AND ENGINEERING(신소재공학부) > Articles
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