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dc.contributor.author전형탁-
dc.date.accessioned2019-12-07T17:12:47Z-
dc.date.available2019-12-07T17:12:47Z-
dc.date.issued2018-04-
dc.identifier.citationJOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, v. 36, no. 3, Article no. 032202en_US
dc.identifier.issn1071-1023-
dc.identifier.urihttps://avs.scitation.org/doi/10.1116/1.5020310-
dc.identifier.urihttp://repository.hanyang.ac.kr/handle/20.500.11754/118203-
dc.description.abstractThe authors investigated the effective Schottky barrier heights of metal and silicon contacts after insertion of insulator layers with different conduction band offsets. A decrease in Schottky barrier height after insertion of an insulator layer was observed. In particular, the Schottky barrier height of metal/semiconductor contacts was lowest when a ZnO layer was inserted compared to the other insulator layer types, because the conduction band offset between ZnO and silicon was the lowest among those measured. The authors also investigated current density as a function of the thickness of the insulator and doping concentration of silicon. Published by the AVS.en_US
dc.description.sponsorshipThis study was supported by a grant from the National Research Foundation of Korea (NRF) funded by the Korean Government (MEST) (Grant No. NRF2015R1A2A1A10052324).en_US
dc.language.isoen_USen_US
dc.publisherA V S AMER INST PHYSICSen_US
dc.titleEffect of adding an insulator between metal and semiconductor layers on contact resistanceen_US
dc.typeArticleen_US
dc.relation.no3-
dc.relation.volume36-
dc.identifier.doi10.1116/1.5020310-
dc.relation.page1-5-
dc.relation.journalJOURNAL OF VACUUM SCIENCE & TECHNOLOGY B-
dc.contributor.googleauthorKim, Hyunjung-
dc.contributor.googleauthorJang, Woochool-
dc.contributor.googleauthorLim, Heewoo-
dc.contributor.googleauthorKweon, Youngkyun-
dc.contributor.googleauthorBang, Minwook-
dc.contributor.googleauthorKwon, Saejin-
dc.contributor.googleauthorKim, Bumsik-
dc.contributor.googleauthorCho, Haewon-
dc.contributor.googleauthorJeon, Hyeongtag-
dc.relation.code2018001644-
dc.sector.campusS-
dc.sector.daehakCOLLEGE OF ENGINEERING[S]-
dc.sector.departmentDIVISION OF MATERIALS SCIENCE AND ENGINEERING-
dc.identifier.pidhjeon-
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COLLEGE OF ENGINEERING[S](공과대학) > MATERIALS SCIENCE AND ENGINEERING(신소재공학부) > Articles
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